A compact drain current model for thin-film transistor under bias stress condition

Rodolfo Garcia, Israel Mejia, Julio Tinoco, Jesus Ezequiel Molinar-Solis, Alejandra Morales, Miguel Aleman, Sergio Sandoval, Manuel A. Quevedo-Lopez

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageAmerican English
Pages (from-to)1803-1809
Number of pages7
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - 1 May 2018
Externally publishedYes

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Drain current
Thin film transistors
Semiconductor materials
Degradation
Networks (circuits)

Cite this

Garcia, Rodolfo ; Mejia, Israel ; Tinoco, Julio ; Molinar-Solis, Jesus Ezequiel ; Morales, Alejandra ; Aleman, Miguel ; Sandoval, Sergio ; Quevedo-Lopez, Manuel A. / A compact drain current model for thin-film transistor under bias stress condition. In: IEEE Transactions on Electron Devices. 2018 ; pp. 1803-1809.
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A compact drain current model for thin-film transistor under bias stress condition. / Garcia, Rodolfo; Mejia, Israel; Tinoco, Julio; Molinar-Solis, Jesus Ezequiel; Morales, Alejandra; Aleman, Miguel; Sandoval, Sergio; Quevedo-Lopez, Manuel A.

In: IEEE Transactions on Electron Devices, 01.05.2018, p. 1803-1809.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Garcia, Rodolfo

AU - Mejia, Israel

AU - Tinoco, Julio

AU - Molinar-Solis, Jesus Ezequiel

AU - Morales, Alejandra

AU - Aleman, Miguel

AU - Sandoval, Sergio

AU - Quevedo-Lopez, Manuel A.

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JO - IEEE Transactions on Electron Devices

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