A compact drain current model for thin-film transistor under bias stress condition

Rodolfo Garcia; Israel Mejia; Julio Tinoco; Jesus Ezequiel Molinar-Solis; Alejandra Morales; Miguel Aleman; Sergio Sandoval; Manuel A. Quevedo-Lopez

doi:10.1109/TED.2018.2818694

A compact drain current model for thin-film transistor under bias stress condition

Rodolfo Garcia, Israel Mejia, Julio Tinoco, Jesus Ezequiel Molinar-Solis, Alejandra Morales, Miguel Aleman, Sergio Sandoval, Manuel A. Quevedo-Lopez

Research output: Contribution to journal › Article

2 Scopus citations

Original language	American English
Pages (from-to)	1803-1809
Number of pages	7
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2018.2818694
State	Published - 1 May 2018
Externally published	Yes

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10.1109/TED.2018.2818694

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Garcia, R., Mejia, I., Tinoco, J., Molinar-Solis, J. E., Morales, A., Aleman, M., Sandoval, S., & Quevedo-Lopez, M. A. (2018). A compact drain current model for thin-film transistor under bias stress condition. IEEE Transactions on Electron Devices, 1803-1809. https://doi.org/10.1109/TED.2018.2818694

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AU - Mejia, Israel

AU - Tinoco, Julio

AU - Molinar-Solis, Jesus Ezequiel

AU - Morales, Alejandra

AU - Aleman, Miguel

AU - Sandoval, Sergio

AU - Quevedo-Lopez, Manuel A.

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