A low-temperature and seedless method for producing hydrogen-free S 3N4

A. L. Leal-Cruz; M. I. Pech-Canul; J. L. De La Peña

A low-temperature and seedless method for producing hydrogen-free S ₃N₄

A. L. Leal-Cruz, M. I. Pech-Canul, J. L. De La Peña

Research output: Contribution to journal › Article › peer-review

Abstract

A simple, seedless method for the synthesis of Si₃N₄ from a hydrogen-free precursor system (Na2SiFe(s)-N2(9)) was developed. From thermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiF_x (SiF₄, SiF₃, SiF₂, SiF and Si) formed during the low-temperature dissociation of Na₂SiF₆ in a conventional CVD system react in-situ with nitrogen to produce Si₃N₄. Whiskers, fibers, coatings and powders were obtained via the Na₂SiF₆-N₂ system at pressures slightly above atmospheric pressure. Not only does the feasibility of the reactions for Na₂SiF₆ dissociation and Si ₃N₄ formation increase with the temperature but also, once the SiF_x chemical species are formed by the former, the latter reaction is even more viable. Amorphous Si₃N₄ is obtained at temperatures of up to 1173 K while crystalline α- and β-Si ₃N₄ are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimal conditions for maximizing Si₃N₄formation were determined.

Original language	English
Pages (from-to)	200-207
Number of pages	8
Journal	Revista Mexicana de Fisica
Volume	54
Issue number	3
State	Published - Jun 2008
Externally published	Yes

Keywords

Amorphous SiN
CVD
Gas-solid precursors
Thermodynamics
α- And β-SiN

Cite this

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title = "A low-temperature and seedless method for producing hydrogen-free S 3N4",

abstract = "A simple, seedless method for the synthesis of Si3N4 from a hydrogen-free precursor system (Na2SiFe(s)-N2(9)) was developed. From thermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiFx (SiF4, SiF3, SiF2, SiF and Si) formed during the low-temperature dissociation of Na2SiF6 in a conventional CVD system react in-situ with nitrogen to produce Si3N4. Whiskers, fibers, coatings and powders were obtained via the Na2SiF6-N2 system at pressures slightly above atmospheric pressure. Not only does the feasibility of the reactions for Na2SiF6 dissociation and Si 3N4 formation increase with the temperature but also, once the SiFx chemical species are formed by the former, the latter reaction is even more viable. Amorphous Si3N4 is obtained at temperatures of up to 1173 K while crystalline α- and β-Si 3N4 are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimal conditions for maximizing Si3N4formation were determined.",

keywords = "Amorphous SiN, CVD, Gas-solid precursors, Thermodynamics, α- And β-SiN",

author = "Leal-Cruz, {A. L.} and Pech-Canul, {M. I.} and {De La Pe{\~n}a}, {J. L.}",

year = "2008",

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T1 - A low-temperature and seedless method for producing hydrogen-free S 3N4

AU - Leal-Cruz, A. L.

AU - Pech-Canul, M. I.

AU - De La Peña, J. L.

PY - 2008/6

Y1 - 2008/6

N2 - A simple, seedless method for the synthesis of Si3N4 from a hydrogen-free precursor system (Na2SiFe(s)-N2(9)) was developed. From thermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiFx (SiF4, SiF3, SiF2, SiF and Si) formed during the low-temperature dissociation of Na2SiF6 in a conventional CVD system react in-situ with nitrogen to produce Si3N4. Whiskers, fibers, coatings and powders were obtained via the Na2SiF6-N2 system at pressures slightly above atmospheric pressure. Not only does the feasibility of the reactions for Na2SiF6 dissociation and Si 3N4 formation increase with the temperature but also, once the SiFx chemical species are formed by the former, the latter reaction is even more viable. Amorphous Si3N4 is obtained at temperatures of up to 1173 K while crystalline α- and β-Si 3N4 are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimal conditions for maximizing Si3N4formation were determined.

AB - A simple, seedless method for the synthesis of Si3N4 from a hydrogen-free precursor system (Na2SiFe(s)-N2(9)) was developed. From thermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiFx (SiF4, SiF3, SiF2, SiF and Si) formed during the low-temperature dissociation of Na2SiF6 in a conventional CVD system react in-situ with nitrogen to produce Si3N4. Whiskers, fibers, coatings and powders were obtained via the Na2SiF6-N2 system at pressures slightly above atmospheric pressure. Not only does the feasibility of the reactions for Na2SiF6 dissociation and Si 3N4 formation increase with the temperature but also, once the SiFx chemical species are formed by the former, the latter reaction is even more viable. Amorphous Si3N4 is obtained at temperatures of up to 1173 K while crystalline α- and β-Si 3N4 are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimal conditions for maximizing Si3N4formation were determined.

KW - Amorphous SiN

KW - CVD

KW - Gas-solid precursors

KW - Thermodynamics

KW - α- And β-SiN

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M3 - Artículo

SN - 0035-001X

VL - 54

SP - 200

EP - 207

JO - Revista Mexicana de Fisica

JF - Revista Mexicana de Fisica

IS - 3

ER -

A low-temperature and seedless method for producing hydrogen-free S ₃N₄

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Keywords

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