A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

Rodolfo Rodriguez-Davila, Adelmo Ortiz-Conde, Carlos Avila-Avendano, Manuel A. Quevedo-Lopez

Research output: Contribution to journalArticle

2 Scopus citations
Original languageAmerican English
Pages (from-to)2979-2985
Number of pages7
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - 1 Jul 2019
Externally publishedYes

Fingerprint Dive into the research topics of 'A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs'. Together they form a unique fingerprint.

  • Cite this