A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

Rodolfo Rodriguez-Davila; Adelmo Ortiz-Conde; Carlos Avila-Avendano; Manuel A. Quevedo-Lopez

doi:10.1109/TED.2019.2913699

A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

Rodolfo Rodriguez-Davila, Adelmo Ortiz-Conde^*, Carlos Avila-Avendano, Manuel A. Quevedo-Lopez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).

Original language	English
Article number	8713512
Pages (from-to)	2979-2985
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	7
DOIs	https://doi.org/10.1109/TED.2019.2913699
State	Published - Jul 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

MOSFET
Mobility enhancement factor
parameter extraction
parasitic series resistance
thin-film transistors (TFTs)
threshold voltage

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10.1109/TED.2019.2913699

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title = "A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs",

abstract = "A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).",

keywords = "MOSFET, Mobility enhancement factor, parameter extraction, parasitic series resistance, thin-film transistors (TFTs), threshold voltage",

author = "Rodolfo Rodriguez-Davila and Adelmo Ortiz-Conde and Carlos Avila-Avendano and Quevedo-Lopez, {Manuel A.}",

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A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs. / Rodriguez-Davila, Rodolfo; Ortiz-Conde, Adelmo; Avila-Avendano, Carlos et al.
In: IEEE Transactions on Electron Devices, Vol. 66, No. 7, 8713512, 07.2019, p. 2979-2985.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

AU - Rodriguez-Davila, Rodolfo

AU - Ortiz-Conde, Adelmo

AU - Avila-Avendano, Carlos

AU - Quevedo-Lopez, Manuel A.

PY - 2019/7

Y1 - 2019/7

N2 - A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).

AB - A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).

KW - MOSFET

KW - Mobility enhancement factor

KW - parameter extraction

KW - parasitic series resistance

KW - thin-film transistors (TFTs)

KW - threshold voltage

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DO - 10.1109/TED.2019.2913699

M3 - Artículo

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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M1 - 8713512

ER -

A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

Abstract

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Keywords

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