A review of recent MOSFET source and drain resistances extraction methods using a single test device

Adelmo Ortiz-Conde; Manuel A. Quevedo-Lopez

doi:10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device

Adelmo Ortiz-Conde, Manuel A. Quevedo-Lopez

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

Original language	English
Title of host publication	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728181769
DOIs	https://doi.org/10.1109/EDTM50988.2021.9420846
State	Published - 8 Apr 2021
Event	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China Duration: 8 Apr 2021 → 11 Apr 2021

Publication series

Name	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/Territory	China
City	Chengdu
Period	8/04/21 → 11/04/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

MOSFET
asymmetric parasitic drain and source series resistance
parameter extraction
thin-film transistors (TFTs)

Access to Document

10.1109/EDTM50988.2021.9420846

Cite this

Ortiz-Conde, A., & Quevedo-Lopez, M. A. (2021). A review of recent MOSFET source and drain resistances extraction methods using a single test device. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 [9420846] (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM50988.2021.9420846

Ortiz-Conde, Adelmo ; Quevedo-Lopez, Manuel A. / A review of recent MOSFET source and drain resistances extraction methods using a single test device. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

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abstract = "The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs. ",

keywords = "MOSFET, asymmetric parasitic drain and source series resistance, parameter extraction, thin-film transistors (TFTs)",

author = "Adelmo Ortiz-Conde and Quevedo-Lopez, {Manuel A.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; null ; Conference date: 08-04-2021 Through 11-04-2021",

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doi = "10.1109/EDTM50988.2021.9420846",

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Ortiz-Conde, A & Quevedo-Lopez, MA 2021, A review of recent MOSFET source and drain resistances extraction methods using a single test device. in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021., 9420846, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Institute of Electrical and Electronics Engineers Inc., 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Chengdu, China, 8/04/21. https://doi.org/10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device. / Ortiz-Conde, Adelmo; Quevedo-Lopez, Manuel A.

2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9420846 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ortiz-Conde, Adelmo

AU - Quevedo-Lopez, Manuel A.

PY - 2021/4/8

Y1 - 2021/4/8

N2 - The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

AB - The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

KW - MOSFET

KW - asymmetric parasitic drain and source series resistance

KW - parameter extraction

KW - thin-film transistors (TFTs)

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BT - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 8 April 2021 through 11 April 2021

ER -

Ortiz-Conde A, Quevedo-Lopez MA. A review of recent MOSFET source and drain resistances extraction methods using a single test device. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9420846. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). doi: 10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device

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Keywords

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