A review of recent MOSFET source and drain resistances extraction methods using a single test device

Adelmo Ortiz-Conde, Manuel A. Quevedo-Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
StatePublished - 8 Apr 2021
Externally publishedYes
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: 8 Apr 202111 Apr 2021

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period8/04/2111/04/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

  • asymmetric parasitic drain and source series resistance
  • MOSFET
  • parameter extraction
  • thin-film transistors (TFTs)

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