Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition

A. Apolinar-Iribe; M. C. Acosta-Enríquez; M. A. Quevedo-Lópezb; R. Ramírez-Bon; A. de LeóN; S. J. Castilloa

Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition

A. Apolinar-Iribe^*, M. C. Acosta-Enríquez, M. A. Quevedo-Lópezb, R. Ramírez-Bon, A. de LeóN, S. J. Castilloa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The CdS thin films using Acetylacetone as complexing agent were prepared using the chemical bath deposition method, with bath temperature of 70°C with differences times of reaction. The thin films were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorption spectroscopy and Atomic Force Microscopy (AFM). The XRD measurements showed that the films have hexagonal polycrystalline structure and the crystallites are oriented preferentially with the (002) and (110) planes. The optical absorption measurements shows the presence of direct transition with energy band gap of 2.37 eV and after increased to 2.40 eV.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Chalcogenide Letters
Volume	8
Issue number	2
State	Published - Feb 2011

Keywords

Acetylacetone
Cadmium Sulfide Thin Films
Semiconductor Thin Films

Cite this

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title = "Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition",

abstract = "The CdS thin films using Acetylacetone as complexing agent were prepared using the chemical bath deposition method, with bath temperature of 70°C with differences times of reaction. The thin films were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorption spectroscopy and Atomic Force Microscopy (AFM). The XRD measurements showed that the films have hexagonal polycrystalline structure and the crystallites are oriented preferentially with the (002) and (110) planes. The optical absorption measurements shows the presence of direct transition with energy band gap of 2.37 eV and after increased to 2.40 eV.",

keywords = "Acetylacetone, Cadmium Sulfide Thin Films, Semiconductor Thin Films",

author = "A. Apolinar-Iribe and Acosta-Enr{\'i}quez, {M. C.} and Quevedo-L{\'o}pezb, {M. A.} and R. Ram{\'i}rez-Bon and {de Le{\'o}N}, A. and Castilloa, {S. J.}",

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month = feb,

language = "Ingl{\'e}s",

volume = "8",

pages = "77--82",

journal = "Chalcogenide Letters",

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publisher = "National Institute R and D of Materials Physics",

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TY - JOUR

T1 - Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition

AU - Apolinar-Iribe, A.

AU - Acosta-Enríquez, M. C.

AU - Quevedo-Lópezb, M. A.

AU - Ramírez-Bon, R.

AU - de LeóN, A.

AU - Castilloa, S. J.

PY - 2011/2

Y1 - 2011/2

N2 - The CdS thin films using Acetylacetone as complexing agent were prepared using the chemical bath deposition method, with bath temperature of 70°C with differences times of reaction. The thin films were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorption spectroscopy and Atomic Force Microscopy (AFM). The XRD measurements showed that the films have hexagonal polycrystalline structure and the crystallites are oriented preferentially with the (002) and (110) planes. The optical absorption measurements shows the presence of direct transition with energy band gap of 2.37 eV and after increased to 2.40 eV.

AB - The CdS thin films using Acetylacetone as complexing agent were prepared using the chemical bath deposition method, with bath temperature of 70°C with differences times of reaction. The thin films were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorption spectroscopy and Atomic Force Microscopy (AFM). The XRD measurements showed that the films have hexagonal polycrystalline structure and the crystallites are oriented preferentially with the (002) and (110) planes. The optical absorption measurements shows the presence of direct transition with energy band gap of 2.37 eV and after increased to 2.40 eV.

KW - Acetylacetone

KW - Cadmium Sulfide Thin Films

KW - Semiconductor Thin Films

UR - http://www.scopus.com/inward/record.url?scp=79954528173&partnerID=8YFLogxK

M3 - Artículo

SN - 1584-8663

VL - 8

SP - 77

EP - 82

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 2

ER -

Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition

Abstract

Keywords

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