Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition

A. Apolinar-Iribe*, M. C. Acosta-Enríquez, M. A. Quevedo-Lópezb, R. Ramírez-Bon, A. de LeóN, S. J. Castilloa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The CdS thin films using Acetylacetone as complexing agent were prepared using the chemical bath deposition method, with bath temperature of 70°C with differences times of reaction. The thin films were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorption spectroscopy and Atomic Force Microscopy (AFM). The XRD measurements showed that the films have hexagonal polycrystalline structure and the crystallites are oriented preferentially with the (002) and (110) planes. The optical absorption measurements shows the presence of direct transition with energy band gap of 2.37 eV and after increased to 2.40 eV.

Original languageEnglish
Pages (from-to)77-82
Number of pages6
JournalChalcogenide Letters
Issue number2
StatePublished - Feb 2011


  • Acetylacetone
  • Cadmium Sulfide Thin Films
  • Semiconductor Thin Films


Dive into the research topics of 'Acetylacetone as complexing agent for CdS thin films grow chemical bath deposition'. Together they form a unique fingerprint.

Cite this