Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors

N. Hernandez-Como, A. Morales-Acevedo, M. Aleman, I. Mejia, M. A. Quevedo-Lopez

Research output: Contribution to journalArticleResearchpeer-review

14 Citations (Scopus)
Original languageAmerican English
Pages (from-to)26-31
Number of pages6
JournalMicroelectronic Engineering
DOIs
StatePublished - 25 Jan 2016
Externally publishedYes

Fingerprint

Zinc Oxide
Thin film transistors
Zinc oxide
Aluminum
zinc oxides
Sputtering
transistors
sputtering
aluminum
Oxide films
Thin films
oxide films
Electrodes
electrodes
thin films
Contact resistance
contact resistance
Substrates
zincblende
visible spectrum

Cite this

Hernandez-Como, N. ; Morales-Acevedo, A. ; Aleman, M. ; Mejia, I. ; Quevedo-Lopez, M. A. / Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors. In: Microelectronic Engineering. 2016 ; pp. 26-31.
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title = "Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors",
author = "N. Hernandez-Como and A. Morales-Acevedo and M. Aleman and I. Mejia and Quevedo-Lopez, {M. A.}",
year = "2016",
month = "1",
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doi = "10.1016/j.mee.2015.10.017",
language = "American English",
pages = "26--31",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

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Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors. / Hernandez-Como, N.; Morales-Acevedo, A.; Aleman, M.; Mejia, I.; Quevedo-Lopez, M. A.

In: Microelectronic Engineering, 25.01.2016, p. 26-31.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors

AU - Hernandez-Como, N.

AU - Morales-Acevedo, A.

AU - Aleman, M.

AU - Mejia, I.

AU - Quevedo-Lopez, M. A.

PY - 2016/1/25

Y1 - 2016/1/25

U2 - 10.1016/j.mee.2015.10.017

DO - 10.1016/j.mee.2015.10.017

M3 - Article

SP - 26

EP - 31

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -