Ammonia-free chemically deposited CdS films as active layers in thin film transistors

G. Arreola-Jardón, L. A. González, L. A. García-Cerda, B. Gnade, M. A. Quevedo-López, R. Ramírez-Bon

Research output: Contribution to journalArticle

42 Citations (Scopus)
Original languageAmerican English
Pages (from-to)517-520
Number of pages4
JournalThin Solid Films
DOIs
StatePublished - 29 Oct 2010

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Thin film transistors
Threshold voltage
Ammonia
ammonia
transistors
threshold voltage
thin films
Gases
Sodium
Annealing
citrates
Ions
Thin films
baths
sodium
annealing
electric potential
gases
ions
Hot Temperature

Cite this

Arreola-Jardón, G., González, L. A., García-Cerda, L. A., Gnade, B., Quevedo-López, M. A., & Ramírez-Bon, R. (2010). Ammonia-free chemically deposited CdS films as active layers in thin film transistors. Thin Solid Films, 517-520. https://doi.org/10.1016/j.tsf.2010.08.097
Arreola-Jardón, G. ; González, L. A. ; García-Cerda, L. A. ; Gnade, B. ; Quevedo-López, M. A. ; Ramírez-Bon, R. / Ammonia-free chemically deposited CdS films as active layers in thin film transistors. In: Thin Solid Films. 2010 ; pp. 517-520.
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Ammonia-free chemically deposited CdS films as active layers in thin film transistors. / Arreola-Jardón, G.; González, L. A.; García-Cerda, L. A.; Gnade, B.; Quevedo-López, M. A.; Ramírez-Bon, R.

In: Thin Solid Films, 29.10.2010, p. 517-520.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ammonia-free chemically deposited CdS films as active layers in thin film transistors

AU - Arreola-Jardón, G.

AU - González, L. A.

AU - García-Cerda, L. A.

AU - Gnade, B.

AU - Quevedo-López, M. A.

AU - Ramírez-Bon, R.

PY - 2010/10/29

Y1 - 2010/10/29

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DO - 10.1016/j.tsf.2010.08.097

M3 - Article

SP - 517

EP - 520

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

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