Abstract
In this work we have grown CdS thin films using an ammonia-free chemical bath deposition process for the active layer in thin film transistors. The CdS films were deposited substituting sodium citrate for ammonia as the complexing agent. The electrical characterization of the as-deposited CdS-based thin film transistors shows that the field effect mobility and threshold voltage were in the range of 0.12-0.16 cm2V-1 s-1 and 8.8-25 V, respectively, depending on the channel length. The device performance was improved considerably after thermal annealing in forming gas at 250 °C for 1 h. The mobility of the annealed devices increased to 4.8-8.8 cm 2V-1 s-1 and the threshold voltage decreased to 8.4-12 V. Ion/Ioff for the annealed devices was approximately 105-106.
Original language | English |
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Pages (from-to) | 517-520 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 1 |
DOIs | |
State | Published - 29 Oct 2010 |
Bibliographical note
Funding Information:This work was supported by CONACYT through the Becas Mixtas and Sabbatical Programs. The technical assistance of C.A. Avila-Herrera is also acknowledged.
Keywords
- Cadmium sulfide
- Chemical bath deposition
- Electrical properties and measurements
- Field effect transistors