Abstract
This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low amplitude. The results match the experimental I-V curves obtained with the parameters extracted from the electrical characteristics of the experimental Schottky diodes: Si/SiO2/Cr/Au/ZnO/Al, glass/Al/ZnO/Au and glass/Al/ZnO/Pd. The results of the simulation show that the devices fabricated in this work can be a useful alternatives for rectifier circuits commonly used in energy harvesting systems, because they are capable of delivering output rectified voltages higher than 1V.
Original language | English |
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Pages (from-to) | 153-159 |
Number of pages | 7 |
Journal | Digest Journal of Nanomaterials and Biostructures |
Volume | 14 |
Issue number | 1 |
State | Published - 1 Jan 2019 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019, S.C. Virtual Company of Phisics S.R.L. All right reserved.
Keywords
- Energy harvesting
- Rectifiers
- Schottky diodes