Atomic layer deposited HfO<inf>2</inf>and HfSiO to enable CMOS gate dielectric scaling, mobility, and V<inf>TH</inf>stability

Paul D. Kirsch, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

Research output: Contribution to conferencePaper

3 Scopus citations
Original languageAmerican English
Pages15-28
Number of pages14
DOIs
StatePublished - 1 Dec 2006
Externally publishedYes
EventECS Transactions -
Duration: 1 Dec 2006 → …

Conference

ConferenceECS Transactions
Period1/12/06 → …

Fingerprint Dive into the research topics of 'Atomic layer deposited HfO<inf>2</inf>and HfSiO to enable CMOS gate dielectric scaling, mobility, and V<inf>TH</inf>stability'. Together they form a unique fingerprint.

Cite this