Atomic layer deposited HfO<inf>2</inf>and HfSiO to enable CMOS gate dielectric scaling, mobility, and V<inf>TH</inf>stability

Paul D. Kirsch, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

Research output: Contribution to conferencePaper

3 Scopus citations
Original languageAmerican English
Pages15-28
Number of pages14
DOIs
StatePublished - 1 Dec 2006
Externally publishedYes
EventECS Transactions -
Duration: 1 Dec 2006 → …

Conference

ConferenceECS Transactions
Period1/12/06 → …

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    Kirsch, P. D., Quevedo-Lopez, M., Krishnan, S. A., Song, S. C., Choi, R., Majhi, P., Senzaki, Y., Bersuker, G., & Lee, B. H. (2006). Atomic layer deposited HfO<inf>2</inf>and HfSiO to enable CMOS gate dielectric scaling, mobility, and V<inf>TH</inf>stability. 15-28. Paper presented at ECS Transactions, . https://doi.org/10.1149/1.2209326