Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

Paul D. Kirsch; Manuel Quevedo-Lopez; Siddarth A. Krishnan; S. C. Song; Rino Choi; Prashant Majhi; Yoshi Senzaki; Gennadi Bersuker; Byoung Hun Lee

doi:10.1149/1.2209326

Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability

Paul D. Kirsch^*, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO₂ formed from TEMAHf and O₃ was found to reach a scaling limit near T_phys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO ₂ is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V _TH and I_d stability during constant voltage stress. HfO₂ attributes include the following: EOT=1.0 nm, >100× J_g reduction vs. SiO₂/PolySi, high field mobility of 82% universal SiO₂ and ∼20 mV of ΔV_TH after 1000s stress at 1.8V. Similar results can be obtained for (HfO₂) _x(SiO₂)_1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

Original language	English
Title of host publication	Atomic Layer Deposition
Publisher	Electrochemical Society Inc.
Pages	15-28
Number of pages	14
Edition	10
ISBN (Electronic)	9781566774437
DOIs	https://doi.org/10.1149/1.2209326
State	Published - 2006
Externally published	Yes
Event	Atomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: 16 Oct 2005 → 21 Oct 2005

Publication series

Name	ECS Transactions
Number	10
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Atomic Layer Deposition - 208th Electrochemical Society Meeting
Country/Territory	United States
City	Los Angeles, CA
Period	16/10/05 → 21/10/05

Access to Document

10.1149/1.2209326

Cite this

Kirsch, P. D., Quevedo-Lopez, M., Krishnan, S. A., Song, S. C., Choi, R., Majhi, P., Senzaki, Y., Bersuker, G., & Lee, B. H. (2006). Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. In Atomic Layer Deposition (10 ed., pp. 15-28). (ECS Transactions; Vol. 1, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/1.2209326

@inproceedings{8a35157df94041e38e0691940f47b170,

title = "Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability",

abstract = "Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.",

author = "Kirsch, {Paul D.} and Manuel Quevedo-Lopez and Krishnan, {Siddarth A.} and Song, {S. C.} and Rino Choi and Prashant Majhi and Yoshi Senzaki and Gennadi Bersuker and Lee, {Byoung Hun}",

year = "2006",

doi = "10.1149/1.2209326",

language = "Ingl{\'e}s",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "15--28",

booktitle = "Atomic Layer Deposition",

edition = "10",

note = "Atomic Layer Deposition - 208th Electrochemical Society Meeting ; Conference date: 16-10-2005 Through 21-10-2005",

}

Kirsch, PD, Quevedo-Lopez, M, Krishnan, SA, Song, SC, Choi, R, Majhi, P, Senzaki, Y, Bersuker, G & Lee, BH 2006, Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. in Atomic Layer Deposition. 10 edn, ECS Transactions, no. 10, vol. 1, Electrochemical Society Inc., pp. 15-28, Atomic Layer Deposition - 208th Electrochemical Society Meeting, Los Angeles, CA, United States, 16/10/05. https://doi.org/10.1149/1.2209326

Atomic layer deposited HfO₂ and HfSiO to enable CMOS gate dielectric scaling, mobility, and V_TH stability. / Kirsch, Paul D.; Quevedo-Lopez, Manuel; Krishnan, Siddarth A. et al.
Atomic Layer Deposition. 10. ed. Electrochemical Society Inc., 2006. p. 15-28 (ECS Transactions; Vol. 1, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

AU - Kirsch, Paul D.

AU - Quevedo-Lopez, Manuel

AU - Krishnan, Siddarth A.

AU - Song, S. C.

AU - Choi, Rino

AU - Majhi, Prashant

AU - Senzaki, Yoshi

AU - Bersuker, Gennadi

AU - Lee, Byoung Hun

PY - 2006

Y1 - 2006

N2 - Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

AB - Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

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M3 - Contribución a la conferencia

AN - SCOPUS:33846849611

T3 - ECS Transactions

SP - 15

EP - 28

BT - Atomic Layer Deposition

PB - Electrochemical Society Inc.

T2 - Atomic Layer Deposition - 208th Electrochemical Society Meeting

Y2 - 16 October 2005 through 21 October 2005

ER -