Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

Paul D. Kirsch*, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAtomic Layer Deposition
PublisherElectrochemical Society Inc.
Pages15-28
Number of pages14
Edition10
ISBN (Electronic)9781566774437
DOIs
StatePublished - 2006
Externally publishedYes
EventAtomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 16 Oct 200521 Oct 2005

Publication series

NameECS Transactions
Number10
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAtomic Layer Deposition - 208th Electrochemical Society Meeting
Country/TerritoryUnited States
CityLos Angeles, CA
Period16/10/0521/10/05

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