Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

Paul D. Kirsch*, Manuel Quevedo-Lopez, Siddarth A. Krishnan, S. C. Song, Rino Choi, Prashant Majhi, Yoshi Senzaki, Gennadi Bersuker, Byoung Hun Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices, ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO 2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved V TH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ∼20 mV of ΔVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2) x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAtomic Layer Deposition
PublisherElectrochemical Society Inc.
Number of pages14
ISBN (Electronic)9781566774437
StatePublished - 2006
Externally publishedYes
EventAtomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 16 Oct 200521 Oct 2005

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


ConferenceAtomic Layer Deposition - 208th Electrochemical Society Meeting
Country/TerritoryUnited States
CityLos Angeles, CA


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