@conference{c6505c20a44d490dba5dc6bd6cf00832,
title = "Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability",
author = "Kirsch, {P. D.} and Quevedo-Lopez, {M. A.} and Krishnan, {S. A.} and C. Krug and H. AlShareef and Park, {C. S.} and R. Harris and N. Moumen and A. Neugroschel and G. Bersuker and Lee, {B. H.} and Wang, {J. G.} and G. Pant and Gnade, {B. E.} and Kim, {M. J.} and Wallace, {R. M.} and Jur, {J. S.} and Lichtenwalner, {D. J.} and Kingon, {A. I.} and R. Jammy",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/IEDM.2006.346862",
language = "American English",
note = "Technical Digest - International Electron Devices Meeting, IEDM ; Conference date: 01-12-2006",
}