Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability

P. D. Kirsch; M. A. Quevedo-Lopez; S. A. Krishnan; C. Krug; H. AlShareef; C. S. Park; R. Harris; N. Moumen; A. Neugroschel; G. Bersuker; B. H. Lee; J. G. Wang; G. Pant; B. E. Gnade; M. J. Kim; R. M. Wallace; J. S. Jur; D. J. Lichtenwalner; A. I. Kingon; R. Jammy

doi:10.1109/IEDM.2006.346862

Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability

P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J. G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, R. Jammy

Research output: Contribution to conference › Paper

14 Scopus citations

Original language	American English
DOIs	https://doi.org/10.1109/IEDM.2006.346862
State	Published - 1 Dec 2006
Externally published	Yes
Event	Technical Digest - International Electron Devices Meeting, IEDM - Duration: 1 Dec 2006 → …

Conference

Conference	Technical Digest - International Electron Devices Meeting, IEDM
Period	1/12/06 → …

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10.1109/IEDM.2006.346862

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Kirsch, P. D., Quevedo-Lopez, M. A., Krishnan, S. A., Krug, C., AlShareef, H., Park, C. S., Harris, R., Moumen, N., Neugroschel, A., Bersuker, G., Lee, B. H., Wang, J. G., Pant, G., Gnade, B. E., Kim, M. J., Wallace, R. M., Jur, J. S., Lichtenwalner, D. J., Kingon, A. I., & Jammy, R. (2006). Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://doi.org/10.1109/IEDM.2006.346862

Kirsch, P. D. ; Quevedo-Lopez, M. A. ; Krishnan, S. A. ; Krug, C. ; AlShareef, H. ; Park, C. S. ; Harris, R. ; Moumen, N. ; Neugroschel, A. ; Bersuker, G. ; Lee, B. H. ; Wang, J. G. ; Pant, G. ; Gnade, B. E. ; Kim, M. J. ; Wallace, R. M. ; Jur, J. S. ; Lichtenwalner, D. J. ; Kingon, A. I. ; Jammy, R. / Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .

@conference{c6505c20a44d490dba5dc6bd6cf00832,

title = "Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability",

author = "Kirsch, {P. D.} and Quevedo-Lopez, {M. A.} and Krishnan, {S. A.} and C. Krug and H. AlShareef and Park, {C. S.} and R. Harris and N. Moumen and A. Neugroschel and G. Bersuker and Lee, {B. H.} and Wang, {J. G.} and G. Pant and Gnade, {B. E.} and Kim, {M. J.} and Wallace, {R. M.} and Jur, {J. S.} and Lichtenwalner, {D. J.} and Kingon, {A. I.} and R. Jammy",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IEDM.2006.346862",

language = "American English",

note = "Technical Digest - International Electron Devices Meeting, IEDM ; Conference date: 01-12-2006",

}

Kirsch, PD, Quevedo-Lopez, MA, Krishnan, SA, Krug, C, AlShareef, H, Park, CS, Harris, R, Moumen, N, Neugroschel, A, Bersuker, G, Lee, BH, Wang, JG, Pant, G, Gnade, BE, Kim, MJ, Wallace, RM, Jur, JS, Lichtenwalner, DJ, Kingon, AI & Jammy, R 2006, 'Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability', Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, 1/12/06. https://doi.org/10.1109/IEDM.2006.346862

Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability. / Kirsch, P. D.; Quevedo-Lopez, M. A.; Krishnan, S. A.; Krug, C.; AlShareef, H.; Park, C. S.; Harris, R.; Moumen, N.; Neugroschel, A.; Bersuker, G.; Lee, B. H.; Wang, J. G.; Pant, G.; Gnade, B. E.; Kim, M. J.; Wallace, R. M.; Jur, J. S.; Lichtenwalner, D. J.; Kingon, A. I.; Jammy, R.

2006. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability

AU - Kirsch, P. D.

AU - Quevedo-Lopez, M. A.

AU - Krishnan, S. A.

AU - Krug, C.

AU - AlShareef, H.

AU - Park, C. S.

AU - Harris, R.

AU - Moumen, N.

AU - Neugroschel, A.

AU - Bersuker, G.

AU - Lee, B. H.

AU - Wang, J. G.

AU - Pant, G.

AU - Gnade, B. E.

AU - Kim, M. J.

AU - Wallace, R. M.

AU - Jur, J. S.

AU - Lichtenwalner, D. J.

AU - Kingon, A. I.

AU - Jammy, R.

PY - 2006/12/1

Y1 - 2006/12/1

U2 - 10.1109/IEDM.2006.346862

DO - 10.1109/IEDM.2006.346862

M3 - Paper

T2 - Technical Digest - International Electron Devices Meeting, IEDM

Y2 - 1 December 2006

ER -