Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability

P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J. G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, R. Jammy

Research output: Contribution to conferencePaper

14 Scopus citations
Original languageAmerican English
DOIs
StatePublished - 1 Dec 2006
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting, IEDM -
Duration: 1 Dec 2006 → …

Conference

ConferenceTechnical Digest - International Electron Devices Meeting, IEDM
Period1/12/06 → …

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