Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability

P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J. G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, R. Jammy

Research output: Contribution to conferencePaper

13 Scopus citations
Original languageAmerican English
DOIs
StatePublished - 1 Dec 2006
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting, IEDM -
Duration: 1 Dec 2006 → …

Conference

ConferenceTechnical Digest - International Electron Devices Meeting, IEDM
Period1/12/06 → …

Fingerprint Dive into the research topics of 'Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability'. Together they form a unique fingerprint.

  • Cite this

    Kirsch, P. D., Quevedo-Lopez, M. A., Krishnan, S. A., Krug, C., AlShareef, H., Park, C. S., Harris, R., Moumen, N., Neugroschel, A., Bersuker, G., Lee, B. H., Wang, J. G., Pant, G., Gnade, B. E., Kim, M. J., Wallace, R. M., Jur, J. S., Lichtenwalner, D. J., Kingon, A. I., & Jammy, R. (2006). Band edge n-MOSFETs with high-k/metal gate stacks scaled to EOT=0.9nm with excellent carrier mobility and high temperature stability. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://doi.org/10.1109/IEDM.2006.346862