Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

S. I. Garduño, M. Estrada, I. Hernandez, A. Cerdeira, J. I. Mejía, M. E. Rivas, M. A. Quevedo

Research output: Contribution to conference › Paper

Original language	American English
DOIs	https://doi.org/10.1109/ROPEC.2015.7395135
State	Published - 29 Jan 2016
Externally published	Yes
Event	2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015 - Duration: 29 Jan 2016 → …

Conference	2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015
Period	29/01/16 → …

Access to Document

Garduño, S. I., Estrada, M., Hernandez, I., Cerdeira, A., Mejía, J. I., Rivas, M. E., & Quevedo, M. A. (2016). Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2. Paper presented at 2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015, . https://doi.org/10.1109/ROPEC.2015.7395135

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title = "Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2",

author = "Gardu{\~n}o, {S. I.} and M. Estrada and I. Hernandez and A. Cerdeira and Mej{\'i}a, {J. I.} and Rivas, {M. E.} and Quevedo, {M. A.}",

year = "2016",

month = jan,

day = "29",

doi = "10.1109/ROPEC.2015.7395135",

language = "American English",

note = "2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015 ; Conference date: 29-01-2016",

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Garduño, SI, Estrada, M, Hernandez, I, Cerdeira, A, Mejía, JI, Rivas, ME & Quevedo, MA 2016, 'Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2', Paper presented at 2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015, 29/01/16. https://doi.org/10.1109/ROPEC.2015.7395135

2016. Paper presented at 2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

AU - Garduño, S. I.

AU - Estrada, M.

AU - Hernandez, I.

AU - Cerdeira, A.

AU - Mejía, J. I.

AU - Rivas, M. E.

AU - Quevedo, M. A.

PY - 2016/1/29

Y1 - 2016/1/29

U2 - 10.1109/ROPEC.2015.7395135

DO - 10.1109/ROPEC.2015.7395135

M3 - Paper

T2 - 2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015

Y2 - 29 January 2016

ER -