Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

S. I. Garduño, M. Estrada, I. Hernandez, A. Cerdeira, J. I. Mejía, M. E. Rivas, M. A. Quevedo

Research output: Contribution to conferencePaper

Original languageAmerican English
DOIs
StatePublished - 29 Jan 2016
Externally publishedYes
Event2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015 -
Duration: 29 Jan 2016 → …

Conference

Conference2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015
Period29/01/16 → …

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    Garduño, S. I., Estrada, M., Hernandez, I., Cerdeira, A., Mejía, J. I., Rivas, M. E., & Quevedo, M. A. (2016). Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2. Paper presented at 2015 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2015, . https://doi.org/10.1109/ROPEC.2015.7395135