TY - JOUR
T1 - Cationic and anionic modification of CdS thin films by surface chemical treatment
AU - Baray-Calderón, Alejandro
AU - Acevedo-Peña, Próspero
AU - Castelo-González, Omar A.
AU - Martínez-Alonso, Claudia
AU - Sotelo-Lerma, Mérida
AU - Arenas-Arrocena, M.C.
AU - Hu, Hailin
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/5
Y1 - 2019/5
N2 - Structural and physical properties of thin solid films can be modified by surface treatment. In this work, chemical bath deposited CdS thin films were treated both by a mercury chloride solution and by a saturated H 2 S gas. The effect of these treatments on electrical properties is clearly observed. Hg 2+ doped CdS films show the highest dark and photo-conductivities, whereas the sulfurized CdS films become photo-insensitive. In Hg 2+ doped CdS samples, new crystalline Hg 3 S 2 Cl 2 and Hg 2 (ClO 4 ) 2 4H 2 O phases are found, and particle size reduction is observed at the surface. Both optical and electrochemical Mott-Schottky (M–S) analysis suggest an intraband level in the electronic structure of Hg 2+ modified CdS. Sulfurized CdS films, on the other hand, keep unchanged their crystalline and morphological structure, as well as optical properties. Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and M–S analysis indicate an increase of sulfur concentration at the surface of sulfurized CdS thin films, leading to a more stoichiometric CdS compound, which used to have lower conductivity. It demonstrates that ion exchange process or cationic substitution is effective for structural and physical property modification, whereas a gaseous saturation method or anionic modification results in a notable surface energy alteration in thin solid CdS films.
AB - Structural and physical properties of thin solid films can be modified by surface treatment. In this work, chemical bath deposited CdS thin films were treated both by a mercury chloride solution and by a saturated H 2 S gas. The effect of these treatments on electrical properties is clearly observed. Hg 2+ doped CdS films show the highest dark and photo-conductivities, whereas the sulfurized CdS films become photo-insensitive. In Hg 2+ doped CdS samples, new crystalline Hg 3 S 2 Cl 2 and Hg 2 (ClO 4 ) 2 4H 2 O phases are found, and particle size reduction is observed at the surface. Both optical and electrochemical Mott-Schottky (M–S) analysis suggest an intraband level in the electronic structure of Hg 2+ modified CdS. Sulfurized CdS films, on the other hand, keep unchanged their crystalline and morphological structure, as well as optical properties. Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and M–S analysis indicate an increase of sulfur concentration at the surface of sulfurized CdS thin films, leading to a more stoichiometric CdS compound, which used to have lower conductivity. It demonstrates that ion exchange process or cationic substitution is effective for structural and physical property modification, whereas a gaseous saturation method or anionic modification results in a notable surface energy alteration in thin solid CdS films.
KW - CdS thin films
KW - Ion exchange process
KW - Solid-gas sulfurization
KW - Surface modification
UR - https://doi.org/10.1016/j.apsusc.2018.12.201
U2 - 10.1016/j.apsusc.2018.12.201
DO - 10.1016/j.apsusc.2018.12.201
M3 - Artículo
SN - 0169-4332
VL - 475
SP - 676
EP - 683
JO - Applied Surface Science
JF - Applied Surface Science
ER -