© 2015 The Authors. In this work CdS layers were deposited by an ammonia-free chemical bath deposition process on SiO<inf>2</inf>/p-Si substrates as active layers of thin film transistors (TFT). The electrical characteristics of the CdS-based TFT with different channel lengths were analyzed after thermal annealing in forming gas combined with previous immersion in CdCl<inf>2</inf> saturated solution. The annealing temperatures were 100, 200 and 300°C. To determine the effects of the CdCl<inf>2</inf> treatment on the device electrical parameters, devices with and without previous immersion in CdCl<inf>2</inf> were thermal annealed in forming gas and analyzed. The results show that the thermal annealing processes at 100 and 200 °C do not improve the electrical characteristics of the devices in both conditions. The annealing at 300 °C in both conditions improves noticeably the electrical performance of the devices attaining mobilities of the order of 5 cm<sup>2</sup>/Vs, threshold voltage in the range -1.5-10 V, swing voltage in the range of 1.65-9 V and I<inf>on</inf>/I<inf>off</inf> current ratio of the order 10<sup>3</sup>-10<sup>6</sup>.
|Original language||American English|
|Number of pages||10|
|Journal||International Journal of Electrochemical Science|
|State||Published - 1 Jan 2015|
Mendívil-Reynoso, T., Ramírez-Rodríguez, L. P., Quevedo-López, M. A., Ramírez-Bon, R., & Castillo, S. J. (2015). CdCl<inf>2</inf> treatment on chemically deposited CdS active layers in thin film transistors. International Journal of Electrochemical Science, 3291-3300. https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84929430959&origin=inward