Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications

G. Suárez-Campos, D. Cabrera-German, A. O. Castelo-González, C. Avila-Avendano, J. L. Fuentes Ríos, M. A. Quevedo-López, R. Aceves, H. Hu, M. Sotelo-Lerma*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number145879
JournalApplied Surface Science
Volume513
DOIs
StatePublished - 30 May 2020

Keywords

  • Aluminum hydroxide
  • Aluminum oxide
  • Chemical bath deposition
  • Dielectric layers
  • MIM capacitor device

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