Characterization of CdS thin films deposited by chemical bath deposition using novel complexing agents

A. Carrillo-Castillo; R. C. Ambrosio Lázaro; E. M. Lira Ojeda; C. A. Martínez Pérez; M. A. Quevedo-López; F. S. Aguirre-Tostado

Characterization of CdS thin films deposited by chemical bath deposition using novel complexing agents

A. Carrillo-Castillo^*, R. C. Ambrosio Lázaro, E. M. Lira Ojeda, C. A. Martínez Pérez, M. A. Quevedo-López, F. S. Aguirre-Tostado

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Cadmium sulfide (CdS) thin films have been deposited by chemical bath deposition (CBD) at 70°C on glass substrates. In order to have a better control of deposition rate in CdS synthesis, Sodium borohydride and hydrazine were demonstrated as novel complexing agents. The structural, optical and electrical characteristics of the CdS thin films obtained were analyzed. Sodium borohydride as complex agent increased the deposition rate while hydrazine reduced the deposition rate due to higher complexation and slow generation of Cd²⁺ while improving the morphology of CdS films. Homogeneous CdS thin films with hexagonal crystalline structure and energy band gap of 2.4 eV were obtained. The deposited thin films showed a good electrical conductivity with resistivity values in the order of 10-300 Ω-cm, suggesting a low metal-semiconductor contact resistivity as well.

Original language	English
Pages (from-to)	421-425
Number of pages	5
Journal	Chalcogenide Letters
Volume	10
Issue number	10
State	Published - 2013

Keywords

Cadmium sulphide
Chemical bath deposition
Complexing agent

Cite this

@article{7d18a0414b544799affb9a32ef3831e6,

title = "Characterization of CdS thin films deposited by chemical bath deposition using novel complexing agents",

abstract = "Cadmium sulfide (CdS) thin films have been deposited by chemical bath deposition (CBD) at 70°C on glass substrates. In order to have a better control of deposition rate in CdS synthesis, Sodium borohydride and hydrazine were demonstrated as novel complexing agents. The structural, optical and electrical characteristics of the CdS thin films obtained were analyzed. Sodium borohydride as complex agent increased the deposition rate while hydrazine reduced the deposition rate due to higher complexation and slow generation of Cd2+ while improving the morphology of CdS films. Homogeneous CdS thin films with hexagonal crystalline structure and energy band gap of 2.4 eV were obtained. The deposited thin films showed a good electrical conductivity with resistivity values in the order of 10-300 Ω-cm, suggesting a low metal-semiconductor contact resistivity as well.",

keywords = "Cadmium sulphide, Chemical bath deposition, Complexing agent",

author = "A. Carrillo-Castillo and {Ambrosio L{\'a}zaro}, {R. C.} and {Lira Ojeda}, {E. M.} and {Mart{\'i}nez P{\'e}rez}, {C. A.} and Quevedo-L{\'o}pez, {M. A.} and Aguirre-Tostado, {F. S.}",

year = "2013",

language = "Ingl{\'e}s",

volume = "10",

pages = "421--425",

journal = "Chalcogenide Letters",

issn = "1584-8663",

publisher = "S.C. Virtual Company of Physics S.R.L",

number = "10",

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TY - JOUR

T1 - Characterization of CdS thin films deposited by chemical bath deposition using novel complexing agents

AU - Carrillo-Castillo, A.

AU - Ambrosio Lázaro, R. C.

AU - Lira Ojeda, E. M.

AU - Martínez Pérez, C. A.

AU - Quevedo-López, M. A.

AU - Aguirre-Tostado, F. S.

PY - 2013

Y1 - 2013

N2 - Cadmium sulfide (CdS) thin films have been deposited by chemical bath deposition (CBD) at 70°C on glass substrates. In order to have a better control of deposition rate in CdS synthesis, Sodium borohydride and hydrazine were demonstrated as novel complexing agents. The structural, optical and electrical characteristics of the CdS thin films obtained were analyzed. Sodium borohydride as complex agent increased the deposition rate while hydrazine reduced the deposition rate due to higher complexation and slow generation of Cd2+ while improving the morphology of CdS films. Homogeneous CdS thin films with hexagonal crystalline structure and energy band gap of 2.4 eV were obtained. The deposited thin films showed a good electrical conductivity with resistivity values in the order of 10-300 Ω-cm, suggesting a low metal-semiconductor contact resistivity as well.

AB - Cadmium sulfide (CdS) thin films have been deposited by chemical bath deposition (CBD) at 70°C on glass substrates. In order to have a better control of deposition rate in CdS synthesis, Sodium borohydride and hydrazine were demonstrated as novel complexing agents. The structural, optical and electrical characteristics of the CdS thin films obtained were analyzed. Sodium borohydride as complex agent increased the deposition rate while hydrazine reduced the deposition rate due to higher complexation and slow generation of Cd2+ while improving the morphology of CdS films. Homogeneous CdS thin films with hexagonal crystalline structure and energy band gap of 2.4 eV were obtained. The deposited thin films showed a good electrical conductivity with resistivity values in the order of 10-300 Ω-cm, suggesting a low metal-semiconductor contact resistivity as well.

KW - Cadmium sulphide

KW - Chemical bath deposition

KW - Complexing agent

UR - http://www.scopus.com/inward/record.url?scp=84887190513&partnerID=8YFLogxK

M3 - Artículo

SN - 1584-8663

VL - 10

SP - 421

EP - 425

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 10

ER -

Characterization of CdS thin films deposited by chemical bath deposition using novel complexing agents

Abstract

Keywords

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