Original language | American English |
---|---|
Pages (from-to) | 185-187 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
DOIs | |
State | Published - 1 Mar 2006 |
Externally published | Yes |
Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm
Zhibo Zhang, S. C. Song, M. A. Quevedo-Lopez, Kisik Choi, Paul Kirsch, Pat Lysaght, Byoung Hun Lee
Research output: Contribution to journal › Article › peer-review
13
Scopus
citations