Co-optimization of the metal gate/high-k stack to achieve high-field mobility &gt;90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Zhibo Zhang; S. C. Song; M. A. Quevedo-Lopez; Kisik Choi; Paul Kirsch; Pat Lysaght; Byoung Hun Lee

doi:10.1109/LED.2006.870245

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Zhibo Zhang, S. C. Song, M. A. Quevedo-Lopez, Kisik Choi, Paul Kirsch, Pat Lysaght, Byoung Hun Lee

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	185-187
Number of pages	3
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2006.870245
State	Published - 1 Mar 2006
Externally published	Yes

Access to Document

10.1109/LED.2006.870245

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33644630331&origin=inward

Fingerprint Dive into the research topics of 'Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm'. Together they form a unique fingerprint.

Cite this

@article{c37c216d99eb4e81bbd7170f9fd30565,

title = "Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT= ∼1 nm",

author = "Zhibo Zhang and Song, {S. C.} and Quevedo-Lopez, {M. A.} and Kisik Choi and Paul Kirsch and Pat Lysaght and Lee, {Byoung Hun}",

year = "2006",

month = mar,

day = "1",

doi = "10.1109/LED.2006.870245",

language = "American English",

pages = "185--187",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm. / Zhang, Zhibo; Song, S. C.; Quevedo-Lopez, M. A.; Choi, Kisik; Kirsch, Paul; Lysaght, Pat; Lee, Byoung Hun.

In: IEEE Electron Device Letters, 01.03.2006, p. 185-187.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT= ∼1 nm

AU - Zhang, Zhibo

AU - Song, S. C.

AU - Quevedo-Lopez, M. A.

AU - Choi, Kisik

AU - Kirsch, Paul

AU - Lysaght, Pat

AU - Lee, Byoung Hun

PY - 2006/3/1

Y1 - 2006/3/1

U2 - 10.1109/LED.2006.870245

DO - 10.1109/LED.2006.870245

M3 - Article

SP - 185

EP - 187

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -

Co-optimization of the metal gate/high-k stack to achieve high-field mobility &gt;90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Access to Document

Cite this

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm