Co-optimization of the metal gate/high-k stack to achieve high-field mobility &gt;90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Zhibo Zhang, S. C. Song, M. A. Quevedo-Lopez, Kisik Choi, Paul Kirsch, Pat Lysaght, Byoung Hun Lee

Research output: Contribution to journalArticle

13 Scopus citations
Original languageAmerican English
Pages (from-to)185-187
Number of pages3
JournalIEEE Electron Device Letters
DOIs
StatePublished - 1 Mar 2006
Externally publishedYes

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