Co-optimization of the metal gate/high-k stack to achieve high-field mobility &gt;90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO<inf>2</inf> universal mobility with an EOT= ∼1 nm

Zhibo Zhang, S. C. Song, M. A. Quevedo-Lopez, Kisik Choi, Paul Kirsch, Pat Lysaght, Byoung Hun Lee

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	185-187
Number of pages	3
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2006.870245
State	Published - 1 Mar 2006
Externally published	Yes

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title = "Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT= ∼1 nm",

author = "Zhibo Zhang and Song, {S. C.} and Quevedo-Lopez, {M. A.} and Kisik Choi and Paul Kirsch and Pat Lysaght and Lee, {Byoung Hun}",

year = "2006",

month = mar,

day = "1",

doi = "10.1109/LED.2006.870245",

language = "American English",

pages = "185--187",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT= ∼1 nm

AU - Zhang, Zhibo

AU - Song, S. C.

AU - Quevedo-Lopez, M. A.

AU - Choi, Kisik

AU - Kirsch, Paul

AU - Lysaght, Pat

AU - Lee, Byoung Hun

PY - 2006/3/1

Y1 - 2006/3/1

U2 - 10.1109/LED.2006.870245

DO - 10.1109/LED.2006.870245

M3 - Article

SP - 185

EP - 187

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -