Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant; A. Gnade; M. J. Kim; R. M. Wallace; B. E. Gnade; M. A. Quevedo-Lopez; P. D. Kirsch; S. Krishnan

doi:10.1063/1.2226991

Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch, S. Krishnan

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34 Scopus citations

Abstract

The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000°C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous. © 2006 American Institute of Physics.

Original language	American English
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.2226991
State	Published - 28 Jul 2006
Externally published	Yes

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@article{391c883f701346ae8bee060508adb3f5,

title = "Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics",

abstract = "The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000°C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous. {\textcopyright} 2006 American Institute of Physics.",

author = "G. Pant and A. Gnade and Kim, {M. J.} and Wallace, {R. M.} and Gnade, {B. E.} and Quevedo-Lopez, {M. A.} and Kirsch, {P. D.} and S. Krishnan",

year = "2006",

month = jul,

day = "28",

doi = "10.1063/1.2226991",

language = "American English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

AU - Pant, G.

AU - Gnade, A.

AU - Kim, M. J.

AU - Wallace, R. M.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

AU - Kirsch, P. D.

AU - Krishnan, S.

PY - 2006/7/28

Y1 - 2006/7/28

N2 - The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000°C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous. © 2006 American Institute of Physics.

AB - The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000°C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous. © 2006 American Institute of Physics.

U2 - 10.1063/1.2226991

DO - 10.1063/1.2226991

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

Abstract

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