Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant; A. Gnade; M. J. Kim; R. M. Wallace; B. E. Gnade; M. A. Quevedo-Lopez; P. D. Kirsch; S. Krishnan

doi:10.1063/1.2226991

Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch, S. Krishnan

Research output: Contribution to journal › Article

Original language	American English
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.2226991
State	Published - 28 Jul 2006
Externally published	Yes

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Pant, G., Gnade, A., Kim, M. J., Wallace, R. M., Gnade, B. E., Quevedo-Lopez, M. A., Kirsch, P. D., & Krishnan, S. (2006). Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics. Applied Physics Letters. https://doi.org/10.1063/1.2226991

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title = "Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics",

author = "G. Pant and A. Gnade and Kim, {M. J.} and Wallace, {R. M.} and Gnade, {B. E.} and Quevedo-Lopez, {M. A.} and Kirsch, {P. D.} and S. Krishnan",

year = "2006",

month = jul,

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doi = "10.1063/1.2226991",

language = "American English",

journal = "Applied Physics Letters",

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T1 - Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

AU - Pant, G.

AU - Gnade, A.

AU - Kim, M. J.

AU - Wallace, R. M.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

AU - Kirsch, P. D.

AU - Krishnan, S.

PY - 2006/7/28

Y1 - 2006/7/28

U2 - 10.1063/1.2226991

DO - 10.1063/1.2226991

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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