Computational modeling of a CVD reactor to produce diamond films

A two-dimensional computational model for the hot filament chemical vapor deposition (HFCVD) process to produce diamond films is presented. The model incorporates the transport of momentum, energy, and mass inside the reaction chamber of a HFCVD reactor. The gas-phase homogeneous reactions were represented by a simplified reaction mechanism. The gas-phase transport equations were coupled to the kinetic expressions representing the catalytic dissociation of the molecular hydrogen at the filament surface and the deposition rate of the diamond film on the substrate. The computational model was solved numerically by means of a commercial software. The model predictions showed good agreement with the experimental data reported in the literature in terms of both temperature and methyl concentration profiles along the filament-substrate center distance. Examples of the potential applications of the present formulation for the design and further optimization of the HFCVD reactor are discussed.