Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

Manuel A. Hernández-Ochoa; Humberto Arizpe-Chávez; Rafael Ramírez-Bon; Alain Pérez-Rodríguez; Manuel Cortez-Valadez; Mario Flores-Acosta

doi:10.1007/s11664-019-07880-6

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

Manuel A. Hernández-Ochoa, Humberto Arizpe-Chávez^*, Rafael Ramírez-Bon, Alain Pérez-Rodríguez, Manuel Cortez-Valadez, Mario Flores-Acosta

^*Corresponding author for this work

Research output: Contribution to journal › Article

Original language	English
Journal	Journal of Electronic Materials
DOIs	https://doi.org/10.1007/s11664-019-07880-6
State	Accepted/In press - 1 Jan 2019
Externally published	Yes

Keywords

junction diodes
metal–insulator–semiconductor
sol–gel
Thin films
ZnO

Access to Document

10.1007/s11664-019-07880-6

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Hernández-Ochoa, M. A., Arizpe-Chávez, H., Ramírez-Bon, R., Pérez-Rodríguez, A., Cortez-Valadez, M., & Flores-Acosta, M. (Accepted/In press). Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition. Journal of Electronic Materials. https://doi.org/10.1007/s11664-019-07880-6

@article{768440a5b61a4b1282a738d5f140fd3b,

title = "Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition",

keywords = "junction diodes, metal–insulator–semiconductor, sol–gel, Thin films, ZnO",

author = "Hern{\'a}ndez-Ochoa, {Manuel A.} and Humberto Arizpe-Ch{\'a}vez and Rafael Ram{\'i}rez-Bon and Alain P{\'e}rez-Rodr{\'i}guez and Manuel Cortez-Valadez and Mario Flores-Acosta",

year = "2019",

month = jan,

day = "1",

doi = "10.1007/s11664-019-07880-6",

language = "Ingl{\'e}s",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition. / Hernández-Ochoa, Manuel A.; Arizpe-Chávez, Humberto; Ramírez-Bon, Rafael; Pérez-Rodríguez, Alain; Cortez-Valadez, Manuel ; Flores-Acosta, Mario.

In: Journal of Electronic Materials, 01.01.2019.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

AU - Hernández-Ochoa, Manuel A.

AU - Arizpe-Chávez, Humberto

AU - Ramírez-Bon, Rafael

AU - Pérez-Rodríguez, Alain

AU - Cortez-Valadez, Manuel

AU - Flores-Acosta, Mario

PY - 2019/1/1

Y1 - 2019/1/1

KW - junction diodes

KW - metal–insulator–semiconductor

KW - sol–gel

KW - Thin films

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85076899315&partnerID=8YFLogxK

U2 - 10.1007/s11664-019-07880-6

DO - 10.1007/s11664-019-07880-6

M3 - Artículo

AN - SCOPUS:85076899315

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

ER -