Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

P. Bolshakov; R. A. Rodriguez-Davila; M. Quevedo-Lopez; C. D. Young

doi:10.1109/SNW50361.2020.9131625

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

P. Bolshakov, R. A. Rodriguez-Davila, M. Quevedo-Lopez, C. D. Young^*

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

Original language	English
Title of host publication	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	73-74
Number of pages	2
ISBN (Electronic)	9781728197357
DOIs	https://doi.org/10.1109/SNW50361.2020.9131625
State	Published - Jun 2020
Event	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States Duration: 13 Jun 2020 → 14 Jun 2020

Publication series

Name	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Country/Territory	United States
City	Honolulu
Period	13/06/20 → 14/06/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

AlO
HCI
PBI
TFTs
V
ZnO

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10.1109/SNW50361.2020.9131625

Cite this

Bolshakov, P., Rodriguez-Davila, R. A., Quevedo-Lopez, M., & Young, C. D. (2020). Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. In 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 (pp. 73-74). Article 9131625 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW50361.2020.9131625

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title = "Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs",

abstract = "Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.",

keywords = "AlO, HCI, PBI, TFTs, V, ZnO",

author = "P. Bolshakov and Rodriguez-Davila, {R. A.} and M. Quevedo-Lopez and Young, {C. D.}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 ; Conference date: 13-06-2020 Through 14-06-2020",

year = "2020",

month = jun,

doi = "10.1109/SNW50361.2020.9131625",

language = "Ingl{\'e}s",

series = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

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Bolshakov, P, Rodriguez-Davila, RA, Quevedo-Lopez, M & Young, CD 2020, Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. in 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020., 9131625, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Institute of Electrical and Electronics Engineers Inc., pp. 73-74, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Honolulu, United States, 13/06/20. https://doi.org/10.1109/SNW50361.2020.9131625

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs. / Bolshakov, P.; Rodriguez-Davila, R. A.; Quevedo-Lopez, M. et al.
2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 73-74 9131625 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

AU - Bolshakov, P.

AU - Rodriguez-Davila, R. A.

AU - Quevedo-Lopez, M.

AU - Young, C. D.

PY - 2020/6

Y1 - 2020/6

N2 - Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

AB - Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

KW - AlO

KW - HCI

KW - PBI

KW - TFTs

KW - V

KW - ZnO

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M3 - Contribución a la conferencia

AN - SCOPUS:85092128963

T3 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

SP - 73

EP - 74

BT - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Y2 - 13 June 2020 through 14 June 2020

ER -

Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

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Keywords

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