Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

P. Bolshakov, R. A. Rodriguez-Davila, M. Quevedo-Lopez, C. D. Young*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.

Original languageEnglish
Title of host publication2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-74
Number of pages2
ISBN (Electronic)9781728197357
DOIs
StatePublished - Jun 2020
Event2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States
Duration: 13 Jun 202014 Jun 2020

Publication series

Name2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Country/TerritoryUnited States
CityHonolulu
Period13/06/2014/06/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

  • AlO
  • HCI
  • PBI
  • TFTs
  • V
  • ZnO

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