Large-Area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 V/V. The Ga2 O3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-Area applications. The responsivity of discrete Ga2 O3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 A/W for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 102. The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.
Bibliographical noteFunding Information:
Manuscript received February 18, 2021; revised March 18, 2021 and March 24, 2021; accepted April 3, 2021. Date of publication April 8, 2021; date of current version June 30, 2021. This work was supported in part by AFOSR under Grant FA9550-18-1-0019, in part by the Nanoholdings LLC, and in part by CONACyT-Mexico. The associate editor coordinating the review of this article and approving it for publication was Ms. Shiva Abbaszadeh. (Corresponding author: Jesus A. Caraveo-Frescas.) Carlos Avila-Avendano, Maria I. Pintor-Monroy, Jesus A. Caraveo-Frescas, and Manuel A. Quevedo-Lopez are with the Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080 USA (e-mail: firstname.lastname@example.org; email@example.com; firstname.lastname@example.org; mquevedo@ utdallas.edu).
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- Flame detector
- UV detectors
- gallium oxide
- poly-Si thin-film transistors