Dependence of h-BN Film Thickness as Grown on Nickel Single-Crystal Substrates of Different Orientations

Harry Chou, Sarmita Majumder, Anupam Roy, Massimo Catalano, Pingping Zhuang, Manuel Quevedo-Lopez, Luigi Colombo, Sanjay K. Banerjee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Chemical vapor deposition (CVD) of two-dimensional materials has been an active area of research in recent years because it is a scalable process for obtaining thin films that can be used to fabricate devices. The growth mechanism for hexagonal boron nitride (h-BN) on metal catalyst substrates has been described to be either surface energy-driven or diffusion-driven. In this work, h-BN is grown in a CVD system on Ni single-crystal substrates as a function of Ni crystallographic orientation to clarify the competing forces acting on the growth mechanism. We observed that the thickness of the h-BN film depends on the Ni substrate orientation, with the growth rate increasing from the (100) surface to the (111) surface and the highest on the (110) surface. We associate the observed results with surface reactivity and diffusivity differences for different Ni orientations. Boron and nitrogen diffuse and precipitate from the Ni bulk to form thin multilayer h-BN. Our results serve to clarify the h-BN CVD growth mechanism which has been previously ascribed to a surface energy-driven growth mechanism.

Original languageEnglish
Pages (from-to)44862-44870
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number51
StatePublished - 26 Dec 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© Copyright 2018 American Chemical Society.


  • electron backscatter diffraction
  • growth mechanism
  • hexagonal boron nitride
  • surface diffusion


Dive into the research topics of 'Dependence of h-BN Film Thickness as Grown on Nickel Single-Crystal Substrates of Different Orientations'. Together they form a unique fingerprint.

Cite this