Design considerations for II-VI multi-gate transistors: The case of cadmium sulfide

Engineering & Materials Science

• Cadmium sulfide 100%
• Gates (transistor) 51%
• Transistors 46%
• Carrier concentration 25%
• Semiconductor materials 16%
• Thin film transistors 11%
• Photolithography 11%
• Simulators 6%
• Substrates 6%
• Geometry 5%
• Electric potential 4%
• Temperature 3%

Physics & Astronomy

• cadmium sulfides 68%
• transistors 43%
• fins 32%
• field effect transistors 28%
• depletion 15%
• slopes 13%
• augmentation 11%
• photolithography 9%
• simulators 8%
• shift 5%
• geometry 5%
• electric potential 4%
• thin films 4%
• simulation 3%
• temperature 2%

Chemistry

• Cadmium Sulfide 68%
• Field Effect 53%
• Semiconductor 20%
• Simulation 8%
• Length 8%
• Liquid Film 6%