Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures

D. Cabrera-German, J.A. García-Valenzuela, M. Cota-Leal, M. Martínez-Gil, R. Aceves, M. Sotelo-Lerma

Research output: Contribution to journalArticleResearchpeer-review

Original languageUndefined/Unknown
JournalMaterials Science in Semiconductor Processing
DOIs
StatePublished - Jan 2019

Cite this

@article{6b3143cfd4b2474f94f29f0adab50ce2,
title = "Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures",
author = "D. Cabrera-German and J.A. Garc{\'i}a-Valenzuela and M. Cota-Leal and M. Mart{\'i}nez-Gil and R. Aceves and M. Sotelo-Lerma",
year = "2019",
month = "1",
doi = "10.1016/j.mssp.2018.09.009",
language = "Indefinido/desconocido",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures. / Cabrera-German, D.; García-Valenzuela, J.A.; Cota-Leal, M.; Martínez-Gil, M.; Aceves, R.; Sotelo-Lerma, M.

In: Materials Science in Semiconductor Processing, 01.2019.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Detailed characterization of good-quality SnS thin films obtained by chemical solution deposition at different reaction temperatures

AU - Cabrera-German, D.

AU - García-Valenzuela, J.A.

AU - Cota-Leal, M.

AU - Martínez-Gil, M.

AU - Aceves, R.

AU - Sotelo-Lerma, M.

PY - 2019/1

Y1 - 2019/1

U2 - 10.1016/j.mssp.2018.09.009

DO - 10.1016/j.mssp.2018.09.009

M3 - Artículo

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -