Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang, P. D. Kirsch, D. Heh, C. Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M. A. Quevedo-Lopez, C. Young, C. S. Park, C. Park, P. Y. Hung, J. Price, H. R. Harris, B. H. Lee, H. H. Tseng, R. Jammy

Research output: Contribution to conferencePaper

12 Scopus citations
Original languageAmerican English
DOIs
StatePublished - 1 Dec 2008
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting, IEDM -
Duration: 1 Dec 2008 → …

Conference

ConferenceTechnical Digest - International Electron Devices Meeting, IEDM
Period1/12/08 → …

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