Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang; P. D. Kirsch; D. Heh; C. Y. Kang; G. Bersuker; M. Hussain; P. Majhi; P. Sivasubramani; D. C. Gilmer; N. Goel; M. A. Quevedo-Lopez; C. Young; C. S. Park; C. Park; P. Y. Hung; J. Price; H. R. Harris; B. H. Lee; H. H. Tseng; R. Jammy

doi:10.1109/IEDM.2008.4796609

Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang, P. D. Kirsch, D. Heh, C. Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M. A. Quevedo-Lopez, C. Young, C. S. Park, C. Park, P. Y. Hung, J. Price, H. R. Harris, B. H. Lee, H. H. Tseng, R. Jammy

Research output: Contribution to conference › Paper

12 Scopus citations

Original language	American English
DOIs	https://doi.org/10.1109/IEDM.2008.4796609
State	Published - 1 Dec 2008
Externally published	Yes
Event	Technical Digest - International Electron Devices Meeting, IEDM - Duration: 1 Dec 2008 → …

Conference

Conference	Technical Digest - International Electron Devices Meeting, IEDM
Period	1/12/08 → …

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10.1109/IEDM.2008.4796609

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Huang, J., Kirsch, P. D., Heh, D., Kang, C. Y., Bersuker, G., Hussain, M., Majhi, P., Sivasubramani, P., Gilmer, D. C., Goel, N., Quevedo-Lopez, M. A., Young, C., Park, C. S., Park, C., Hung, P. Y., Price, J., Harris, H. R., Lee, B. H., Tseng, H. H., & Jammy, R. (2008). Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://doi.org/10.1109/IEDM.2008.4796609

Huang, J. ; Kirsch, P. D. ; Heh, D. ; Kang, C. Y. ; Bersuker, G. ; Hussain, M. ; Majhi, P. ; Sivasubramani, P. ; Gilmer, D. C. ; Goel, N. ; Quevedo-Lopez, M. A. ; Young, C. ; Park, C. S. ; Park, C. ; Hung, P. Y. ; Price, J. ; Harris, H. R. ; Lee, B. H. ; Tseng, H. H. ; Jammy, R. / Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .

@conference{1b2c75483cd643969b0b68e133f7f28d,

title = "Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application",

author = "J. Huang and Kirsch, {P. D.} and D. Heh and Kang, {C. Y.} and G. Bersuker and M. Hussain and P. Majhi and P. Sivasubramani and Gilmer, {D. C.} and N. Goel and Quevedo-Lopez, {M. A.} and C. Young and Park, {C. S.} and C. Park and Hung, {P. Y.} and J. Price and Harris, {H. R.} and Lee, {B. H.} and Tseng, {H. H.} and R. Jammy",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/IEDM.2008.4796609",

language = "American English",

note = "Technical Digest - International Electron Devices Meeting, IEDM ; Conference date: 01-12-2008",

}

Huang, J, Kirsch, PD, Heh, D, Kang, CY, Bersuker, G, Hussain, M, Majhi, P, Sivasubramani, P, Gilmer, DC, Goel, N, Quevedo-Lopez, MA, Young, C, Park, CS, Park, C, Hung, PY, Price, J, Harris, HR, Lee, BH, Tseng, HH & Jammy, R 2008, 'Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application', Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, 1/12/08. https://doi.org/10.1109/IEDM.2008.4796609

Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. / Huang, J.; Kirsch, P. D.; Heh, D.; Kang, C. Y.; Bersuker, G.; Hussain, M.; Majhi, P.; Sivasubramani, P.; Gilmer, D. C.; Goel, N.; Quevedo-Lopez, M. A.; Young, C.; Park, C. S.; Park, C.; Hung, P. Y.; Price, J.; Harris, H. R.; Lee, B. H.; Tseng, H. H.; Jammy, R.

2008. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

AU - Huang, J.

AU - Kirsch, P. D.

AU - Heh, D.

AU - Kang, C. Y.

AU - Bersuker, G.

AU - Hussain, M.

AU - Majhi, P.

AU - Sivasubramani, P.

AU - Gilmer, D. C.

AU - Goel, N.

AU - Quevedo-Lopez, M. A.

AU - Young, C.

AU - Park, C. S.

AU - Park, C.

AU - Hung, P. Y.

AU - Price, J.

AU - Harris, H. R.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2008/12/1

Y1 - 2008/12/1

U2 - 10.1109/IEDM.2008.4796609

DO - 10.1109/IEDM.2008.4796609

M3 - Paper

T2 - Technical Digest - International Electron Devices Meeting, IEDM

Y2 - 1 December 2008

ER -