Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

J. Huang, P. D. Kirsch, D. Heh, C. Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M. A. Quevedo-Lopez, C. Young, C. S. Park, C. Park, P. Y. Hung, J. Price, H. R. Harris, B. H. Lee, H. H. Tseng, R. Jammy

Research output: Contribution to conference › Paper › Research

11 Citations (Scopus)
Original languageAmerican English
DOIs
StatePublished - 1 Dec 2008
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting, IEDM -
Duration: 1 Dec 2008 → …

Conference

ConferenceTechnical Digest - International Electron Devices Meeting, IEDM
Period1/12/08 → …

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Thickness control
Metals
Degradation

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Huang, J., Kirsch, P. D., Heh, D., Kang, C. Y., Bersuker, G., Hussain, M., ... Jammy, R. (2008). Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://doi.org/10.1109/IEDM.2008.4796609
Huang, J. ; Kirsch, P. D. ; Heh, D. ; Kang, C. Y. ; Bersuker, G. ; Hussain, M. ; Majhi, P. ; Sivasubramani, P. ; Gilmer, D. C. ; Goel, N. ; Quevedo-Lopez, M. A. ; Young, C. ; Park, C. S. ; Park, C. ; Hung, P. Y. ; Price, J. ; Harris, H. R. ; Lee, B. H. ; Tseng, H. H. ; Jammy, R. / Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .
@conference{1b2c75483cd643969b0b68e133f7f28d,
title = "Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application",
author = "J. Huang and Kirsch, {P. D.} and D. Heh and Kang, {C. Y.} and G. Bersuker and M. Hussain and P. Majhi and P. Sivasubramani and Gilmer, {D. C.} and N. Goel and Quevedo-Lopez, {M. A.} and C. Young and Park, {C. S.} and C. Park and Hung, {P. Y.} and J. Price and Harris, {H. R.} and Lee, {B. H.} and Tseng, {H. H.} and R. Jammy",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/IEDM.2008.4796609",
language = "American English",
note = "Technical Digest - International Electron Devices Meeting, IEDM ; Conference date: 01-12-2008",

}

Huang, J, Kirsch, PD, Heh, D, Kang, CY, Bersuker, G, Hussain, M, Majhi, P, Sivasubramani, P, Gilmer, DC, Goel, N, Quevedo-Lopez, MA, Young, C, Park, CS, Park, C, Hung, PY, Price, J, Harris, HR, Lee, BH, Tseng, HH & Jammy, R 2008, 'Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application' Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, 1/12/08, . https://doi.org/10.1109/IEDM.2008.4796609

Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. / Huang, J.; Kirsch, P. D.; Heh, D.; Kang, C. Y.; Bersuker, G.; Hussain, M.; Majhi, P.; Sivasubramani, P.; Gilmer, D. C.; Goel, N.; Quevedo-Lopez, M. A.; Young, C.; Park, C. S.; Park, C.; Hung, P. Y.; Price, J.; Harris, H. R.; Lee, B. H.; Tseng, H. H.; Jammy, R.

2008. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, .

Research output: Contribution to conference › Paper › Research

TY - CONF

T1 - Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application

AU - Huang, J.

AU - Kirsch, P. D.

AU - Heh, D.

AU - Kang, C. Y.

AU - Bersuker, G.

AU - Hussain, M.

AU - Majhi, P.

AU - Sivasubramani, P.

AU - Gilmer, D. C.

AU - Goel, N.

AU - Quevedo-Lopez, M. A.

AU - Young, C.

AU - Park, C. S.

AU - Park, C.

AU - Hung, P. Y.

AU - Price, J.

AU - Harris, H. R.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2008/12/1

Y1 - 2008/12/1

U2 - 10.1109/IEDM.2008.4796609

DO - 10.1109/IEDM.2008.4796609

M3 - Paper

ER -

Huang J, Kirsch PD, Heh D, Kang CY, Bersuker G, Hussain M et al. Device and reliability improvement of HfSiON+LaOx/Metal gate stacks for 22nm node application. 2008. Paper presented at Technical Digest - International Electron Devices Meeting, IEDM, . https://doi.org/10.1109/IEDM.2008.4796609

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