Dielectric properties of PMMA-SiO2 hybrid films

M. D. Morales-Acosta, M. A. Quevedo-Lopez, H. N. Alshareef, B. Gnade, R. Ramirez-Bon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond.

Original languageEnglish
Title of host publicationAdvanced Electron Microscopy and Nanomaterials
PublisherTrans Tech Publications Ltd
Pages25-28
Number of pages4
ISBN (Print)087849281X, 9780878492817
DOIs
StatePublished - 2010
Externally publishedYes
Event1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09 - Saltillo, Coahuila, Mexico
Duration: 29 Sep 20092 Oct 2009

Publication series

NameMaterials Science Forum
Volume644
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
Country/TerritoryMexico
CitySaltillo, Coahuila
Period29/09/092/10/09

Keywords

  • Capacitor
  • Flexible electronics
  • Hybrid gate dielectric
  • Organic-inorganic materials

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