Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. BösckeD. J. Lichtenwalner, J. S. Jur, A. I. Kingon

Research output: Contribution to journalArticle

161 Scopus citations
Original languageAmerican English
JournalApplied Physics Letters
DOIs
StatePublished - 14 Mar 2008
Externally publishedYes

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    Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., Alshareef, H., Choi, K., Park, C. S., Freeman, K., Hussain, M. M., Bersuker, G., Harris, H. R., Majhi, P., Choi, R., Lysaght, P., Lee, B. H., Tseng, H. H., Jammy, R., ... Kingon, A. I. (2008). Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning. Applied Physics Letters. https://doi.org/10.1063/1.2890056