Dipole moment model explaining nFET v<inf>t</inf> tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics

P. Sivasubramani, T. S. Böscke, J. Huang, C. D. Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R. Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, R. Jammy

Research output: Contribution to conferencePaper

74 Scopus citations
Original languageAmerican English
Pages68-69
Number of pages2
DOIs
StatePublished - 1 Dec 2007
EventDigest of Technical Papers - Symposium on VLSI Technology -
Duration: 1 Dec 2007 → …

Conference

ConferenceDigest of Technical Papers - Symposium on VLSI Technology
Period1/12/07 → …

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    Sivasubramani, P., Böscke, T. S., Huang, J., Young, C. D., Kirsch, P. D., Krishnan, S. A., Quevedo-Lopez, M. A., Govindarajan, S., Ju, B. S., Harris, H. R., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I., Kim, J., Gnade, B. E., Wallace, R. M., Bersuker, G., Lee, B. H., & Jammy, R. (2007). Dipole moment model explaining nFET v<inf>t</inf> tuning utilizing La. Sc, Er, and Sr doped HfSiON dielectrics. 68-69. Paper presented at Digest of Technical Papers - Symposium on VLSI Technology, . https://doi.org/10.1109/VLSIT.2007.4339730