The electrical conductivity and Hall coefficient of InAs crystals, doped separately and simultaneously with Cd and Te to give concentrations 10**1**8-10**2**0 cm** minus **3, were measured at T equals 77 degree K. It is shown that in the case of compensated samples the dependence of the electron density on the composition is described by n equals f//1(N//D minus N//A) and the corresponding dependence of the hole density is p equals f//2(N//a minus N//D), where the functions f//1 and f//2 were the same as for the doping with one impurity. An analysis indicates that beginning from Cd and Te concentrations of 10**1**9 cm** minus **3, the majority of the impurities are in the bound electrically neutral form of donor-acceptor pairs.
|Original language||American English|
|Number of pages||3|
|Journal||Soviet physics. Semiconductors|
|State||Published - 1 Jan 1979|