Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

A. Carrillo-Castillo*, F. S. Aguirre-Tostado, A. Salas-Villasenor, I. Mejia, B. E. Gnade, M. Sotelo-Lerma, M. A. Quevedo-Lopez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10-3 cm2/V-s and ~6 V, respectively.

Original languageEnglish
Pages (from-to)105-111
Number of pages7
JournalChalcogenide Letters
Volume10
Issue number3
StatePublished - 2013

Keywords

  • Chemical bath deposition
  • Lead sulphide
  • Thin films transistors

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