Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

A. Carrillo-Castillo; F. S. Aguirre-Tostado; A. Salas-Villasenor; I. Mejia; B. E. Gnade; M. Sotelo-Lerma; M. A. Quevedo-Lopez

Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

A. Carrillo-Castillo^*, F. S. Aguirre-Tostado, A. Salas-Villasenor, I. Mejia, B. E. Gnade, M. Sotelo-Lerma, M. A. Quevedo-Lopez

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10^-3 cm²/V-s and ~6 V, respectively.

Original language	English
Pages (from-to)	105-111
Number of pages	7
Journal	Chalcogenide Letters
Volume	10
Issue number	3
State	Published - 2013

Keywords

Chemical bath deposition
Lead sulphide
Thin films transistors

Cite this

@article{50dc061e556441e6aa03d056553e4ac1,

title = "Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications",

abstract = "Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10-3 cm2/V-s and ~6 V, respectively.",

keywords = "Chemical bath deposition, Lead sulphide, Thin films transistors",

author = "A. Carrillo-Castillo and Aguirre-Tostado, {F. S.} and A. Salas-Villasenor and I. Mejia and Gnade, {B. E.} and M. Sotelo-Lerma and Quevedo-Lopez, {M. A.}",

year = "2013",

language = "Ingl{\'e}s",

volume = "10",

pages = "105--111",

journal = "Chalcogenide Letters",

issn = "1584-8663",

publisher = "National Institute R and D of Materials Physics",

number = "3",

}

TY - JOUR

T1 - Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

AU - Carrillo-Castillo, A.

AU - Aguirre-Tostado, F. S.

AU - Salas-Villasenor, A.

AU - Mejia, I.

AU - Gnade, B. E.

AU - Sotelo-Lerma, M.

AU - Quevedo-Lopez, M. A.

PY - 2013

Y1 - 2013

N2 - Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10-3 cm2/V-s and ~6 V, respectively.

AB - Lead sulfide (PbS) thin films were prepared by chemical bath deposition (CBD) as function of deposition time, pH and deposition rate and the impact of the resulting film structure on the thin film transistor (TFT) electrical characteristics was evaluated. Structure and morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy respectively (SEM). The deposited films show a cubic phase (galena) with an average crystallite size of ~25 nm. Three different PbS deposition conditions were evaluated in TFTs using source and drain gold contacts. The best electrical performance was observed for films deposited at high deposition rates. These transistors, showed field effect mobility and threshold voltage of ~3×10-3 cm2/V-s and ~6 V, respectively.

KW - Chemical bath deposition

KW - Lead sulphide

KW - Thin films transistors

UR - http://www.scopus.com/inward/record.url?scp=84874925408&partnerID=8YFLogxK

M3 - Artículo

SN - 1584-8663

VL - 10

SP - 105

EP - 111

JO - Chalcogenide Letters

JF - Chalcogenide Letters

IS - 3

ER -

Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications

Abstract

Keywords

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