Effect of deposition rate on the morphology of CdS films deposited in an ammonia free solution

A. Carrillo-Castillo*, F. S. Aguirre-Tostado, A. Salas-Villasenor, I. Mejia, B. E. Gnade, M. Sotelo-Lerma, M. A. Quevedo-López

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Cadmium sulphide semiconductor thin films have been deposited by chemical bath technique (70°C) on HfO2 substrates. The effect of pH on deposition rate was studied to determine the optimum condition for deposition. CdS films were deposited at pH ranging from 10 to 11.9 in an ammonia-free CBD process employing sodium citrate dihydrate and potassium hydroxide as complexing agents. The increase of pH reduced the deposition rate due to higher complexation and slow generation of Cd2+, improving the morphology of CdS films. X- ray diffraction studies showed hexagonal crystalline phase of CdS with an optical band gap around 2.4 eV as determined by UV-Vis absorption. Fourier transform infrared spectroscopy showed more presence of impurities on CdS films deposited at low deposition rate-high pH.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalChalcogenide Letters
Volume10
Issue number2
StatePublished - 2013

Keywords

  • Cadmium sulphide
  • Chemical bath deposition
  • Deposition rate
  • pH

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