© 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.
|Original language||American English|
|Number of pages||3|
|State||Published - 18 Mar 2016|
|Event||IEEE International Integrated Reliability Workshop Final Report - |
Duration: 18 Mar 2016 → …
|Conference||IEEE International Integrated Reliability Workshop Final Report|
|Period||18/03/16 → …|