Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young, R. Campbell, S. Daasa, S. Benton, R. Rodriguez Davila, I. Mejia, M. Quevedo-Lopez

Research output: Contribution to conferencePaper

Abstract

© 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.
Original languageAmerican English
Pages34-36
Number of pages3
DOIs
StatePublished - 18 Mar 2016
Externally publishedYes
EventIEEE International Integrated Reliability Workshop Final Report -
Duration: 18 Mar 2016 → …

Conference

ConferenceIEEE International Integrated Reliability Workshop Final Report
Period18/03/16 → …

Fingerprint Dive into the research topics of 'Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs'. Together they form a unique fingerprint.

  • Cite this

    Young, C. D., Campbell, R., Daasa, S., Benton, S., Davila, R. R., Mejia, I., & Quevedo-Lopez, M. (2016). Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. 34-36. Paper presented at IEEE International Integrated Reliability Workshop Final Report, . https://doi.org/10.1109/IIRW.2015.7437062