Abstract
© 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.
Original language | American English |
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Pages | 34-36 |
Number of pages | 3 |
DOIs | |
State | Published - 18 Mar 2016 |
Externally published | Yes |
Event | IEEE International Integrated Reliability Workshop Final Report - Duration: 18 Mar 2016 → … |
Conference
Conference | IEEE International Integrated Reliability Workshop Final Report |
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Period | 18/03/16 → … |