Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young; R. Campbell; S. Daasa; S. Benton; R. Rodriguez Davila; I. Mejia; M. Quevedo-Lopez

doi:10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young, R. Campbell, S. Daasa, S. Benton, R. Rodriguez Davila, I. Mejia, M. Quevedo-Lopez

Research output: Contribution to conference › Paper

Abstract

© 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

Original language	American English
Pages	34-36
Number of pages	3
DOIs	https://doi.org/10.1109/IIRW.2015.7437062
State	Published - 18 Mar 2016
Externally published	Yes
Event	IEEE International Integrated Reliability Workshop Final Report - Duration: 18 Mar 2016 → …

Conference

Conference	IEEE International Integrated Reliability Workshop Final Report
Period	18/03/16 → …

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Young, C. D., Campbell, R., Daasa, S., Benton, S., Davila, R. R., Mejia, I., & Quevedo-Lopez, M. (2016). Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. 34-36. Paper presented at IEEE International Integrated Reliability Workshop Final Report, . https://doi.org/10.1109/IIRW.2015.7437062

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title = "Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs",

abstract = "{\textcopyright} 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.",

author = "Young, {C. D.} and R. Campbell and S. Daasa and S. Benton and Davila, {R. Rodriguez} and I. Mejia and M. Quevedo-Lopez",

year = "2016",

month = mar,

day = "18",

doi = "10.1109/IIRW.2015.7437062",

language = "American English",

pages = "34--36",

note = "IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-03-2016",

}

Young, CD, Campbell, R, Daasa, S, Benton, S, Davila, RR, Mejia, I & Quevedo-Lopez, M 2016, 'Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs', Paper presented at IEEE International Integrated Reliability Workshop Final Report, 18/03/16 pp. 34-36. https://doi.org/10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. / Young, C. D.; Campbell, R.; Daasa, S.; Benton, S.; Davila, R. Rodriguez; Mejia, I.; Quevedo-Lopez, M.

2016. 34-36 Paper presented at IEEE International Integrated Reliability Workshop Final Report, .

Research output: Contribution to conference › Paper

TY - CONF

T1 - Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

AU - Young, C. D.

AU - Campbell, R.

AU - Daasa, S.

AU - Benton, S.

AU - Davila, R. Rodriguez

AU - Mejia, I.

AU - Quevedo-Lopez, M.

PY - 2016/3/18

Y1 - 2016/3/18

N2 - © 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

AB - © 2015 IEEE. We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

U2 - 10.1109/IIRW.2015.7437062

DO - 10.1109/IIRW.2015.7437062

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T2 - IEEE International Integrated Reliability Workshop Final Report

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ER -