Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young; R. Campbell; S. Daasa; S. Benton; R. Rodriguez Davila; I. Mejia; M. Quevedo-Lopez

doi:10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

C. D. Young, R. Campbell, S. Daasa, S. Benton, R. Rodriguez Davila, I. Mejia, M. Quevedo-Lopez

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

Original language	English
Title of host publication	2015 IEEE International Integrated Reliability Workshop
Subtitle of host publication	Final Report, IIRW 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	34-36
Number of pages	3
ISBN (Electronic)	9781467373968
DOIs	https://doi.org/10.1109/IIRW.2015.7437062
State	Published - 18 Mar 2016
Event	IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 - S. Lake Tahoe, United States Duration: 11 Oct 2015 → 15 Oct 2015

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2016-March
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015
Country/Territory	United States
City	S. Lake Tahoe
Period	11/10/15 → 15/10/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Al2O3
HfO2
TFT
ZnO
threshold voltage instability

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10.1109/IIRW.2015.7437062

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Young, C. D., Campbell, R., Daasa, S., Benton, S., Davila, R. R., Mejia, I., & Quevedo-Lopez, M. (2016). Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. In 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 (pp. 34-36). Article 7437062 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2016-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2015.7437062

Young, C. D. ; Campbell, R. ; Daasa, S. et al. / Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 34-36 (IEEE International Integrated Reliability Workshop Final Report).

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title = "Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs",

abstract = "We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.",

keywords = "Al2O3, HfO2, TFT, ZnO, threshold voltage instability",

author = "Young, {C. D.} and R. Campbell and S. Daasa and S. Benton and Davila, {R. Rodriguez} and I. Mejia and M. Quevedo-Lopez",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015 ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2016",

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doi = "10.1109/IIRW.2015.7437062",

language = "Ingl{\'e}s",

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Young, CD, Campbell, R, Daasa, S, Benton, S, Davila, RR, Mejia, I & Quevedo-Lopez, M 2016, Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. in 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015., 7437062, IEEE International Integrated Reliability Workshop Final Report, vol. 2016-March, Institute of Electrical and Electronics Engineers Inc., pp. 34-36, IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015, S. Lake Tahoe, United States, 11/10/15. https://doi.org/10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. / Young, C. D.; Campbell, R.; Daasa, S. et al.
2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 34-36 7437062 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2016-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

AU - Young, C. D.

AU - Campbell, R.

AU - Daasa, S.

AU - Benton, S.

AU - Davila, R. Rodriguez

AU - Mejia, I.

AU - Quevedo-Lopez, M.

PY - 2016/3/18

Y1 - 2016/3/18

N2 - We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

AB - We investigated the effects of hafnium oxide (HfO2) gate dielectric thickness and forming gas annealing on threshold voltage instability in zinc oxide thin film transistors using a variety of gate voltage - drain current testing methodologies. We found that dielectric thickness reduction and annealing significantly decreased the threshold voltage instability and the Vt reduction remained over an extended period of testing. Then, a similar investigation was conducted on zinc oxide thin-film transistors (ZnO TFT) with a thin layer of aluminum oxide (Al2O3) as the dielectric where a significant reduction in ΔVt was also observed.

KW - Al2O3

KW - HfO2

KW - TFT

KW - ZnO

KW - threshold voltage instability

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M3 - Contribución a la conferencia

AN - SCOPUS:84964655388

T3 - IEEE International Integrated Reliability Workshop Final Report

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EP - 36

BT - 2015 IEEE International Integrated Reliability Workshop

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015

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ER -

Young CD, Campbell R, Daasa S, Benton S, Davila RR, Mejia I et al. Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs. In 2015 IEEE International Integrated Reliability Workshop: Final Report, IIRW 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 34-36. 7437062. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW.2015.7437062

Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs

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