Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

A.L. Leal-Cruz, M.I. Pech-Canul, E. Lara-Curzio, R.M. Trejo, R. Peascoe

Research output: Book/Report › Book › peer-review

Original language	Undefined/Unknown
State	Published - 2009

Cite this

TY - BOOK

T1 - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

AU - Leal-Cruz, A.L.

AU - Pech-Canul, M.I.

AU - Lara-Curzio, E.

AU - Trejo, R.M.

AU - Peascoe, R.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-70349155082&partnerID=MN8TOARS

M3 - Libro

BT - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

ER -