Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

A.L. Leal-Cruz, M.I. Pech-Canul, E. Lara-Curzio, R.M. Trejo, R. Peascoe

Research output: Book/ReportBook

Original languageUndefined/Unknown
StatePublished - 2009

Cite this

Leal-Cruz, A. L., Pech-Canul, M. I., Lara-Curzio, E., Trejo, R. M., & Peascoe, R. (2009). Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD.