Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

A.L. Leal-Cruz, M.I. Pech-Canul, E. Lara-Curzio, R.M. Trejo, R. Peascoe

Research output: Book/ReportBookResearchpeer-review

Original languageUndefined/Unknown
StatePublished - 2009

Cite this

Leal-Cruz, A. L., Pech-Canul, M. I., Lara-Curzio, E., Trejo, R. M., & Peascoe, R. (2009). Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD.
Leal-Cruz, A.L. ; Pech-Canul, M.I. ; Lara-Curzio, E. ; Trejo, R.M. ; Peascoe, R. / Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD. 2009.
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Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD. / Leal-Cruz, A.L.; Pech-Canul, M.I.; Lara-Curzio, E.; Trejo, R.M.; Peascoe, R.

2009.

Research output: Book/ReportBookResearchpeer-review

TY - BOOK

T1 - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

AU - Leal-Cruz, A.L.

AU - Pech-Canul, M.I.

AU - Lara-Curzio, E.

AU - Trejo, R.M.

AU - Peascoe, R.

PY - 2009

Y1 - 2009

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M3 - Libro

BT - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

ER -