Effect of Flow Rate, Nitrogen Precursor and Diluent on Si<inf>2</inf>N<inf>2</inf>O Deposition by HYSYCVD

A. L. Leal-Cruz, M. I. Pech-Canul, E. Lara-Curzio, R. M. Trejo, R. Peascoe

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageAmerican English
Title of host publicationProcessing and Properties of Advanced Ceramics and Composites: Ceramic Transactions
Number of pages8
ISBN (Electronic)9780470522189
DOIs
StatePublished - 5 Jun 2009
Externally publishedYes

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    Leal-Cruz, A. L., Pech-Canul, M. I., Lara-Curzio, E., Trejo, R. M., & Peascoe, R. (2009). Effect of Flow Rate, Nitrogen Precursor and Diluent on Si<inf>2</inf>N<inf>2</inf>O Deposition by HYSYCVD. In Processing and Properties of Advanced Ceramics and Composites: Ceramic Transactions https://doi.org/10.1002/9780470522189.ch4