Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD

A. L. Leal-Cruz, M. I. Pech-Canul, E. Lara-Curzio, R. M. Trejo, R. Peascoe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	American English
Title of host publication	Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD
Pages	35-42
Number of pages	8
ISBN (Electronic)	9780470408452
State	Published - 21 Sep 2009
Externally published	Yes
Event	Ceramic Transactions - Duration: 1 Jan 2012 → …

Conference	Ceramic Transactions
Period	1/01/12 → …

Fingerprint Dive into the research topics of 'Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD'. Together they form a unique fingerprint.

Leal-Cruz, A. L., Pech-Canul, M. I., Lara-Curzio, E., Trejo, R. M., & Peascoe, R. (2009). Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD. In Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD (pp. 35-42). (Ceramic Transactions; Vol. 203).

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title = "Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD",

author = "Leal-Cruz, {A. L.} and Pech-Canul, {M. I.} and E. Lara-Curzio and Trejo, {R. M.} and R. Peascoe",

year = "2009",

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isbn = "9780470408452",

series = "Ceramic Transactions",

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note = "Ceramic Transactions ; Conference date: 01-01-2012",

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Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD. 2009. p. 35-42 (Ceramic Transactions; Vol. 203).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

AU - Leal-Cruz, A. L.

AU - Pech-Canul, M. I.

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AU - Trejo, R. M.

AU - Peascoe, R.

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M3 - Conference contribution

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T3 - Ceramic Transactions

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BT - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD

T2 - Ceramic Transactions

Y2 - 1 January 2012

ER -