Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD

A. L. Leal-Cruz, M. I. Pech-Canul, E. Lara-Curzio, R. M. Trejo, R. Peascoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageAmerican English
Title of host publicationEffect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD
Pages35-42
Number of pages8
ISBN (Electronic)9780470408452
StatePublished - 21 Sep 2009
Externally publishedYes
EventCeramic Transactions -
Duration: 1 Jan 2012 → …

Publication series

NameCeramic Transactions
Volume203
ISSN (Print)1042-1122

Conference

ConferenceCeramic Transactions
Period1/01/12 → …

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  • Cite this

    Leal-Cruz, A. L., Pech-Canul, M. I., Lara-Curzio, E., Trejo, R. M., & Peascoe, R. (2009). Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD. In Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD (pp. 35-42). (Ceramic Transactions; Vol. 203).