Effect of flow rate, nitrogen precursor and diluent on Si<inf>2</inf>N <inf>2</inf>O deposition by HYSYCVD

A. L. Leal-Cruz, M. I. Pech-Canul, E. Lara-Curzio, R. M. Trejo, R. Peascoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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