Effect of Flow Rate, Nitrogen Precursor and Diluent on Si2N2O Deposition by HYSYCVD

A. L. Leal-Cruz, M. I. Pech-Canul*, E. Lara-Curzio, R. M. Trejo, R. Peascoe

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

The effects of flow rate, nitrogen precursor and diluent on the synthesis of Si2N2O by the hybrid precursor chemical vapor deposition method (HYSYCVD) were investigated. Based on an L9 Taguchi experimental design, the processing parameters were studied at three levels: flow rate (10, 15 and 20 cm3/min), nitrogen precursor (UHP-N2, 50% N2-balance ammonia, and 5 % N2-balance ammonia), and diluent (Ar, He, and with no use of diluent). Anova shows that flow rate of nitrogen precursor has the highest relative contribution (46 %) to the variability in the formation of Si2N2O, followed by the type of nitrogen precursor (44 %) and, the type of diluent (8 %). Deposition of Si2N2O is maximized by using 10 cm3/min of UHP-N2 and with no use of diluent. Results from the characterization of additional trials by XRD and SEM show that in the temperature range 1153.15-1603.15 K and processing times between 0-70 min, Si2N2O is formed as spheres, rough and fine fibers.

Original languageEnglish
Title of host publicationProcessing and Properties of Advanced Ceramics and Composites
Subtitle of host publicationCeramic Transactions
Publisherwiley
Pages35-42
Number of pages8
ISBN (Electronic)9780470522189
ISBN (Print)9780470408452
DOIs
StatePublished - 5 Jun 2009
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2009 by The American Ceramic Society. All rights reserved.

Keywords

  • Flow rate
  • Hybrid precursor chemical vapor deposition method
  • L9 Taguchi experimental design
  • Nitrogen precursor
  • Silicon oxynitride

Fingerprint

Dive into the research topics of 'Effect of Flow Rate, Nitrogen Precursor and Diluent on Si2N2O Deposition by HYSYCVD'. Together they form a unique fingerprint.

Cite this