Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSixOy films

M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, J. J. Chambers, L. Colombo

Research output: Contribution to journalArticle

59 Scopus citations
Original languageAmerican English
Pages (from-to)4669-4671
Number of pages3
JournalApplied Physics Letters
DOIs
StatePublished - 30 Jun 2003
Externally publishedYes

Fingerprint Dive into the research topics of 'Effect of N incorporation on boron penetration from p<sup>+</sup>polycrystalline-Si through HfSixOy films'. Together they form a unique fingerprint.

  • Cite this

    Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., LiFatou, A., Chambers, J. J., & Colombo, L. (2003). Effect of N incorporation on boron penetration from p+polycrystalline-Si through HfSixOy films. Applied Physics Letters, 4669-4671. https://doi.org/10.1063/1.1586483