Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs

M. Shahriar Rahman, Tanvir Morshed, S. P. Devireddy, M. A. Quevedo-Lopez, Ajit Shanware, Luigi Colombo, Zeynep Çelik-Butler

Research output: Contribution to conferencePaper

1 Scopus citations
Original languageAmerican English
Pages25-28
Number of pages4
DOIs
StatePublished - 1 Dec 2007
Externally publishedYes
EventAIP Conference Proceedings -
Duration: 1 Dec 2007 → …

Conference

ConferenceAIP Conference Proceedings
Period1/12/07 → …

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    Rahman, M. S., Morshed, T., Devireddy, S. P., Quevedo-Lopez, M. A., Shanware, A., Colombo, L., & Çelik-Butler, Z. (2007). Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs. 25-28. Paper presented at AIP Conference Proceedings, . https://doi.org/10.1063/1.2759629