Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs

M. Shahriar Rahman; Tanvir Morshed; S. P. Devireddy; M. A. Quevedo-Lopez; Ajit Shanware; Luigi Colombo; Zeynep Çelik-Butler

doi:10.1063/1.2759629

Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs

M. Shahriar Rahman, Tanvir Morshed, S. P. Devireddy, M. A. Quevedo-Lopez, Ajit Shanware, Luigi Colombo, Zeynep Çelik-Butler

Research output: Contribution to conference › Paper

1 Scopus citations

Original language	American English
Pages	25-28
Number of pages	4
DOIs	https://doi.org/10.1063/1.2759629
State	Published - 1 Dec 2007
Externally published	Yes
Event	AIP Conference Proceedings - Duration: 1 Dec 2007 → …

Conference

Conference	AIP Conference Proceedings
Period	1/12/07 → …

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10.1063/1.2759629

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Rahman, M. S., Morshed, T., Devireddy, S. P., Quevedo-Lopez, M. A., Shanware, A., Colombo, L., & Çelik-Butler, Z. (2007). Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs. 25-28. Paper presented at AIP Conference Proceedings, . https://doi.org/10.1063/1.2759629

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title = "Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs",

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AU - Devireddy, S. P.

AU - Quevedo-Lopez, M. A.

AU - Shanware, Ajit

AU - Colombo, Luigi

AU - Çelik-Butler, Zeynep

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