Effect of nitrogen incorporation methods on 1/f noise and mobility characteristics in HfSiON NMOSFETs

M. Shahriar Rahman, Tanvir Morshed, S. P. Devireddy, M. A. Quevedo-Lopez, Ajit Shanware, Luigi Colombo, Zeynep Çelik-Butler

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Low frequency noise (LFN) characteristics of HfSiO and HfSiON nMOS with TiN metal gate were compared. Two different methods to introduce nitrogen in HfSiO, plasma and thermal nitridation, were discussed from LFN point of view. Using Multi-stack Unified Noise (MSUN) model, number and mobility fluctuation components were separated to find out the effects of processing on LFN characteristics. Different processing techniques have negligible effects on number fluctuation components. However, mobility fluctuation components were significantly affected. The reason might be due to the presence and distribution of various Coulomb scattering sites at the silicon-high-k interface and in the bulk of high-k oxide due to different nitridation processes.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages25-28
Number of pages4
DOIs
StatePublished - 2007
Externally publishedYes
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 9 Sep 200714 Sep 2007

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Noise and Fluctuations, ICNF2007
Country/TerritoryJapan
CityTokyo
Period9/09/0714/09/07

Keywords

  • 1/f noise
  • HfSiON
  • MOSFET
  • high-k
  • plasma nitridation
  • thermal nitridation

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