Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric

M. Shahriar Rahman, Tanvir Morshed, S. P. Devireddy, Zeynep Çelik-Butler*, M. A. Quevedo-Lopez, A. Shanware, L. Colombo

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy