Effect of nitrogen on band alignment in HfSiON gate dielectrics

S. Sayan, N. V. Nguyen, J. Ehrstein, J. J. Chambers, M. R. Visokay, M. A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D. A. Fischer, M. Paunescu, O. Celik, E. Garfunkel

Research output: Contribution to journalArticle

38 Scopus citations
Original languageAmerican English
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
DOIs
StatePublished - 25 Nov 2005
Externally publishedYes

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    Sayan, S., Nguyen, N. V., Ehrstein, J., Chambers, J. J., Visokay, M. R., Quevedo-Lopez, M. A., Colombo, L., Yoder, D., Levin, I., Fischer, D. A., Paunescu, M., Celik, O., & Garfunkel, E. (2005). Effect of nitrogen on band alignment in HfSiON gate dielectrics. Applied Physics Letters, 1-3. https://doi.org/10.1063/1.2135390