Effect of processing parameters on the deposition rate of Si <inf>3</inf>N<inf>4</inf>/Si<inf>2</inf>N<inf>2</inf>O by chemical vapor infiltration and the in situ thermal decomposition of Na<inf>2</inf>SiF <inf>6</inf>

M. I. Pech-Canul, J. L. De La Peña, A. L. Leal-Cruz

Research output: Contribution to journalArticle

13 Scopus citations
Original languageAmerican English
Pages (from-to)729-735
Number of pages7
JournalApplied Physics A: Materials Science and Processing
DOIs
StatePublished - 1 Nov 2007

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