Effect of processing parameters on the deposition rate of Si 3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF 6

M. I. Pech-Canul*, J. L. De La Peña, A. L. Leal-Cruz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Silicon nitride (Si3N4) and oxynitride (Si 2N2O) were deposited by chemical vapor infiltration (CVI) through a novel route involving the in-situ thermal decomposition of Na 2SiF6 in commercial nitrogen precursors containing impurity oxygen. In addition, the quantitative effect of processing time (30, 60, 90, 120 min), temperature (1000, 1100, 1200 and 1300 °C), nitrogen precursor (N2 or N2-5%NH3) and gas flow rate (46.5, 93, 120 and 240 cm3/min) on phase percentage and deposition rate of Si3N4 and Si2N2O was investigated. Analysis of variance shows that the parameter that most significantly impacts the total amount of deposited phase is the processing temperature, followed by processing time and nitrogen precursor. Regardless of the nitrogen precursor, at 1300 °C, Si3N4 and Si 2N2O depositions follow an S-like and parabolic behavior, respectively. The incubation period shown by Si3N4 in N2-5%NH3 is associated to a decrease in the O2 partial pressure during Si2N2O formation while the rapid increase at long processing times is attributed to the enhanced effect of hydrogen.

Original languageEnglish
Pages (from-to)729-735
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume89
Issue number3
DOIs
StatePublished - Nov 2007
Externally publishedYes

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