Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

G. Pant*, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000 °C 10 s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films.

Original languageEnglish
Article number032901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - 2006
Externally publishedYes


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