Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

G. Pant; A. Gnade; M. J. Kim; R. M. Wallace; B. E. Gnade; M. A. Quevedo-Lopez; P. D. Kirsch

doi:10.1063/1.2165182

Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

G. Pant^*, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000 °C 10 s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films.

Original language	English
Article number	032901
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2165182
State	Published - 2006
Externally published	Yes

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title = "Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics",

abstract = "The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000 °C 10 s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films.",

author = "G. Pant and A. Gnade and Kim, {M. J.} and Wallace, {R. M.} and Gnade, {B. E.} and Quevedo-Lopez, {M. A.} and Kirsch, {P. D.}",

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doi = "10.1063/1.2165182",

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T1 - Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

AU - Pant, G.

AU - Gnade, A.

AU - Kim, M. J.

AU - Wallace, R. M.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

AU - Kirsch, P. D.

PY - 2006

Y1 - 2006

N2 - The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000 °C 10 s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films.

AB - The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000 °C 10 s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films.

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U2 - 10.1063/1.2165182

DO - 10.1063/1.2165182

M3 - Artículo

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SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

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ER -

Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

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