Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics

G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch

Research output: Contribution to journalArticle

40 Scopus citations
Original languageAmerican English
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
DOIs
StatePublished - 30 Jan 2006
Externally publishedYes

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