Effects in the optical and structural properties caused by mg or zn doping of gan films grown via radio-frequency magnetron sputtering using laboratory-prepared targets

Erick Gastellóu*, Godofredo García, Ana María Herrera, Crisoforo Morales, Rafael García, Gustavo Alonso Hirata, Enrique Rosendo, José Alberto Luna, Mario Robles, Jorge Alberto Rodríguez, Yani Dallane Ramírez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1 (TO), E1 (TO), and E2 (High) for the hexagonal structure of GaN.

Original languageEnglish
Article number6990
JournalApplied Sciences (Switzerland)
Volume11
Issue number15
DOIs
StatePublished - 1 Aug 2021
Externally publishedYes

Bibliographical note

Funding Information:
Acknowledgments: The authors gratefully acknowledge the technical support of CNyN-UNAM for the characterizations performed, particularly to Eloísa Aparicio, Israel Gradilla, Laura Briones, and Elías Marcelo Tejeda. This research was partially supported by CONACyT (México), CIDS-ICUAP-BUAP, and UTPuebla.

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

Keywords

  • Film
  • GaN
  • Incorporation
  • Radio-frequency magnetron sputtering
  • Target

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