TY - JOUR
T1 - Effects of reaction temperature on the physical properties of chemically deposited Cds films
AU - Castillo, SJ
AU - Sotelo-Lerma, M
AU - Neyra, IA
AU - Ortuno, MB
AU - Ramirez-Bon, R
AU - Espinoza-Beltran, FJ
PY - 1998
Y1 - 1998
N2 - Cadmium sulfide films were grown by the chemical bath deposition technique using CdCl2, CS(NH2)2, KOH, NH4/NH4OH and sodium citrate as the reactive substances. CdS films were deposited by one hour at solution temperatures from 30°C to 80°C. The structural and optical properties of the films were studied as a function of the reaction temperature. There is found that homogeneous, transparent with good adherence CdS films can be obtained in the whole range of deposition temperature. The main effect of temperature is to increase the deposition rate of the films. The energy band gap of the CdS films is not affected significatively by the reaction temperature. The high value for the energy band gap of the films is expained in terms of the contraction of the CdS crystalline lattice.
AB - Cadmium sulfide films were grown by the chemical bath deposition technique using CdCl2, CS(NH2)2, KOH, NH4/NH4OH and sodium citrate as the reactive substances. CdS films were deposited by one hour at solution temperatures from 30°C to 80°C. The structural and optical properties of the films were studied as a function of the reaction temperature. There is found that homogeneous, transparent with good adherence CdS films can be obtained in the whole range of deposition temperature. The main effect of temperature is to increase the deposition rate of the films. The energy band gap of the CdS films is not affected significatively by the reaction temperature. The high value for the energy band gap of the films is expained in terms of the contraction of the CdS crystalline lattice.
KW - Optical Properties
KW - Semiconductors
KW - Structural Properties
KW - Thin Films
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000076920300052&KeyUID=WOS:000076920300052
U2 - 10.4028/www.scientific.net/MSF.287-288.343
DO - 10.4028/www.scientific.net/MSF.287-288.343
M3 - Artículo
VL - 287-288
SP - 343
EP - 346
JO - Trends and New Applications of Thin Films
JF - Trends and New Applications of Thin Films
ER -