TY - JOUR
T1 - Effects of the annealing on CUS thin films using triethanolamine as complexing agent by CBD
AU - Apolinar-Iribe, A.
AU - Acosta-Enríquez, M. C.
AU - Berman-Mendoza, D.
AU - Mendívil-Reynoso, T.
AU - Larios-Rodríguez, E.
AU - Ramírez-Bon, R.
AU - Castillo, S. J.
PY - 2013/12
Y1 - 2013/12
N2 - We present the annealing effects on ammonia-free CuxS thin films using Triethanolamine and barium hydroxide as ligand agents by chemical bath deposition method. We synthesize two different samples: one as ground and the other with thermal treatment at 180°C. The X-ray diffraction showed an amorphous nature for both samples. It was established from reflection and transmission measurements that the direct energy band gap obtained was 2.57 eV as ground and 2.52 eV for annealing samples and the indirect energy band gap obtained was 1.365 eV as ground and 0.98 eV for annealing. The morphology was studied by Atomic Force Microscopy, where we obtained roughnesses of 19.128 nm and 23.506 nm for the thin films without and with thermal treatment, respectively; and the cluster sizes, which were between 87 - 200 nm ranges as ground sample and 136 - 247 nm range for annealed sample. The CuS (covellite) with amorphous structure was obtained. The resistivity of ρ ≅10 - 3 ω cm was measured using Four Point Method. The chemical element composition was obtained by using XRay Photoelectron Spectroscopy. Complementary characterization of Raman Spectroscopy and Transmission Electron Microscopy were carried out.
AB - We present the annealing effects on ammonia-free CuxS thin films using Triethanolamine and barium hydroxide as ligand agents by chemical bath deposition method. We synthesize two different samples: one as ground and the other with thermal treatment at 180°C. The X-ray diffraction showed an amorphous nature for both samples. It was established from reflection and transmission measurements that the direct energy band gap obtained was 2.57 eV as ground and 2.52 eV for annealing samples and the indirect energy band gap obtained was 1.365 eV as ground and 0.98 eV for annealing. The morphology was studied by Atomic Force Microscopy, where we obtained roughnesses of 19.128 nm and 23.506 nm for the thin films without and with thermal treatment, respectively; and the cluster sizes, which were between 87 - 200 nm ranges as ground sample and 136 - 247 nm range for annealed sample. The CuS (covellite) with amorphous structure was obtained. The resistivity of ρ ≅10 - 3 ω cm was measured using Four Point Method. The chemical element composition was obtained by using XRay Photoelectron Spectroscopy. Complementary characterization of Raman Spectroscopy and Transmission Electron Microscopy were carried out.
KW - Annealing
KW - Chemical bath deposition
KW - Complexing agent
KW - Thin film
KW - Triethanolamine
UR - http://www.scopus.com/inward/record.url?scp=84889590793&partnerID=8YFLogxK
M3 - Artículo
SN - 1584-8663
VL - 10
SP - 543
EP - 553
JO - Chalcogenide Letters
JF - Chalcogenide Letters
IS - 12
ER -