We present the annealing effects on ammonia-free CuxS thin films using Triethanolamine and barium hydroxide as ligand agents by chemical bath deposition method. We synthesize two different samples: one as ground and the other with thermal treatment at 180°C. The X-ray diffraction showed an amorphous nature for both samples. It was established from reflection and transmission measurements that the direct energy band gap obtained was 2.57 eV as ground and 2.52 eV for annealing samples and the indirect energy band gap obtained was 1.365 eV as ground and 0.98 eV for annealing. The morphology was studied by Atomic Force Microscopy, where we obtained roughnesses of 19.128 nm and 23.506 nm for the thin films without and with thermal treatment, respectively; and the cluster sizes, which were between 87 - 200 nm ranges as ground sample and 136 - 247 nm range for annealed sample. The CuS (covellite) with amorphous structure was obtained. The resistivity of ρ ≅10 - 3 ω cm was measured using Four Point Method. The chemical element composition was obtained by using XRay Photoelectron Spectroscopy. Complementary characterization of Raman Spectroscopy and Transmission Electron Microscopy were carried out.

Original languageEnglish
Pages (from-to)543-553
Number of pages11
JournalChalcogenide Letters
Issue number12
StatePublished - Dec 2013


  • Annealing
  • Chemical bath deposition
  • Complexing agent
  • Thin film
  • Triethanolamine


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